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High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
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High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
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Journal Article
High Resolution Investigation of Stacking Fault Density by HRXRD and STEM
2019
Overview
The effect of varying growth rate on the formation of defects in homo-epitaxially grown cubic silicon carbide (3C-SiC) is studied. Three growth rates are considered (30, 60 and 90 μm/hr) demonstrating that as the growth rate increases the density of point defects, as demonstrated by photo- luminescence, and stacking faults (SFs), as measured by a KOH etching procedure, increase. Scanning transmission electron microscopy images demonstrate generation, annihilation and closure of SFs as a function film thickness. High resolution X-ray diffraction is used to uncover the higher quality of homo-epitaxial with respect hetero-epitaxial films through the examination of the sample mosaicity and SF density.
Publisher
Trans Tech Publications Ltd
