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Second-order electrogyration effect in BSO crystal
by
Guerrero-V, María Alejandra
, Rueda-P, Jorge-Enrique
in
Bismuth silicon oxide
/ Crystals
/ Electric fields
/ Engineering
/ Lasers
/ Light
/ Optical Devices
/ Optics
/ Photonics
/ Physical Chemistry
/ Physics
/ Physics and Astronomy
/ Quantum Optics
2024
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Second-order electrogyration effect in BSO crystal
by
Guerrero-V, María Alejandra
, Rueda-P, Jorge-Enrique
in
Bismuth silicon oxide
/ Crystals
/ Electric fields
/ Engineering
/ Lasers
/ Light
/ Optical Devices
/ Optics
/ Photonics
/ Physical Chemistry
/ Physics
/ Physics and Astronomy
/ Quantum Optics
2024
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Do you wish to request the book?
Second-order electrogyration effect in BSO crystal
by
Guerrero-V, María Alejandra
, Rueda-P, Jorge-Enrique
in
Bismuth silicon oxide
/ Crystals
/ Electric fields
/ Engineering
/ Lasers
/ Light
/ Optical Devices
/ Optics
/ Photonics
/ Physical Chemistry
/ Physics
/ Physics and Astronomy
/ Quantum Optics
2024
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Journal Article
Second-order electrogyration effect in BSO crystal
2024
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Overview
Using a non-holographic optical setup, we employed a Mueller–Stokes polarimeter to measure both the linear electro-optic and second-order electrogyration effects. The second-order electrogyration effect was observed in a
B
i
12
S
i
O
20
(BSO) crystal with a (110) cut. This response was found for the electric field applied both parallel and perpendicular to the [001] direction, where the values for the second-order electrogyration are
4.86
×
10
7
pm
2
/
V
2
and
1.87
×
10
7
pm
2
/
V
2
, respectively. Additionally, the linear electro-optic coefficient
γ
41
was measured to be
1.17
pm/V
for
660.5
nm
.
Publisher
Springer Berlin Heidelberg,Springer Nature B.V
Subject
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