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Design and simulation of RF MEMS switch for use in the millimetre wavelength range and SPDT RF MEMS switch
by
Ezhova, O A
, Lysenko, I E
, Shafrostova, S I
, Tkachenko, A V
in
Actuation
/ Frequencies
/ Frequency ranges
/ Microelectromechanical systems
/ Physics
/ Silicon oxides
/ Substrates
/ Thickness
2020
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Design and simulation of RF MEMS switch for use in the millimetre wavelength range and SPDT RF MEMS switch
by
Ezhova, O A
, Lysenko, I E
, Shafrostova, S I
, Tkachenko, A V
in
Actuation
/ Frequencies
/ Frequency ranges
/ Microelectromechanical systems
/ Physics
/ Silicon oxides
/ Substrates
/ Thickness
2020
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Do you wish to request the book?
Design and simulation of RF MEMS switch for use in the millimetre wavelength range and SPDT RF MEMS switch
by
Ezhova, O A
, Lysenko, I E
, Shafrostova, S I
, Tkachenko, A V
in
Actuation
/ Frequencies
/ Frequency ranges
/ Microelectromechanical systems
/ Physics
/ Silicon oxides
/ Substrates
/ Thickness
2020
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Design and simulation of RF MEMS switch for use in the millimetre wavelength range and SPDT RF MEMS switch
Journal Article
Design and simulation of RF MEMS switch for use in the millimetre wavelength range and SPDT RF MEMS switch
2020
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Overview
This article describes in detail the design of a shunt capacitive RF MEMS switch for Ka-frequency band, as well as the design of a single-pole-double-directional RF MEMS switch made on its basis. An electrostatic and electromagnetic analysis was performed using the MATLAB and ANSYS HFSS software package. The switch uses a 1.52 V actuation voltage and 1.3 μs of switching time to move the membrane from the up state to the down state. The operating frequency range of this switch is between 24-34 GHz with isolation of -53 dB at 29 GHz and reflection loss of -0.25 dB for this frequency range. The design of the switch is made on a GaAs substrate with a thickness of 525 μm with a double-sided insulating layer of silicon oxide with a thickness of 2 μm.
Publisher
IOP Publishing
Subject
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