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A new design and optimization of SnSe-based dual absorber solar cell with efficiency above 28
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A new design and optimization of SnSe-based dual absorber solar cell with efficiency above 28
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Journal Article
A new design and optimization of SnSe-based dual absorber solar cell with efficiency above 28
2024
Overview
Tin selenide (SnSe)-based solar cells are gaining significant interest from researchers due to their exceptional semiconductor properties. The primary aim of this study is to enhance the performance of the newly proposed Cu/FTO/CdS/SnSe/Sb2Se3/Au solar cell and to analyze the effects of the Sb2Se3 second absorber layer and CdS buffer layer on key performance metrics such as open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE). SCAPS-1D simulation software was used for this investigation. Various factors were examined to improve performance, including the impacts of thickness variation, carrier concentration, bulk defect concentration in each layer, interface defects, operating temperature, and the placement of front and rear electrodes. The reference structure (Cu/FTO/CdS/SnSe/Au) showed a PCE of 26.15%, VOC of 0.79 V, JSC of 36.36 mA/cm2, and FF of 85.94%. By adding the Sb2Se3 layer as a second absorber in the proposed structure (Cu/FTO/CdS/SnSe/Sb2Se3/Au), the performance improved to a PCE of 28.18%, VOC of 0.84 V, JSC of 38.42 mA/cm2, and FF of 86.57%. This study offers valuable insights and a practical approach to developing economically viable SnSe-based thin-film solar cells.
