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Influence of h-BN Concentration on the Development of PVDF-HFP/TiO2/h-BN Nanocomposite Films for Electroadhesive Applications
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Influence of h-BN Concentration on the Development of PVDF-HFP/TiO2/h-BN Nanocomposite Films for Electroadhesive Applications
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Influence of h-BN Concentration on the Development of PVDF-HFP/TiO2/h-BN Nanocomposite Films for Electroadhesive Applications
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Journal Article
Influence of h-BN Concentration on the Development of PVDF-HFP/TiO2/h-BN Nanocomposite Films for Electroadhesive Applications
2024
Overview
Because of their enormous potential for use in current electronic systems, polymer-based dielectric materials have garnered considerable attention. The spatial distribution of fillers has a significant impact on the dielectric behavior of polymer composites, so a better understanding of the relationship between the dielectric properties of composites and the spatial distribution of filler would be extremely helpful in developing new high-performance dielectrics. In this study, anatase TiO2 and hexagonal boron nitride (h-BN) nanocomposites were prepared by ball-milling. This was followed by the preparation of poly(vinylidene fluoride)–co-hexafluoropropylene (PVDF-HFP)-based polymer nanocomposites. TiO2/h-BN material was confirmed by x-ray diffraction (XRD) analysis. The TiO2/h-BN nanoparticles were well distributed in scanning electron microscopy (SEM) images, with very little particle aggregation. The Fourier transform infrared (FTIR) spectroscopy data indicate that the nanocomposite components interact well. AC impedance spectroscopy was used to investigate the variations in electrical characteristics including dielectric constant, dielectric loss and electrical resistivity (Nyquist plot) of the prepared composite film. These films were applied to enhance load-bearing capacity during electrostatic force state, making use of flexible fabric-based metal electrodes. The load-bearing capacity of the film was determined by measuring the tensile strength. The PVDF-HFP/TiO2/h-BN nanocomposite showed flexibility in addition to dependable dielectric capabilities, making it potentially suitable for a variety of flexible electronic devices such as electroadhesion and electrostatic storage devices.
