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Porous organosilicates low-dielectric films for high-frequency devices
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Journal Article
Porous organosilicates low-dielectric films for high-frequency devices
2004
Overview
The dielectric properties are reported for nanoporous thin films of poly(methyl silsesquioxane) (MSSQ) for use as an ultralow, dielectric intermetal insulator. Direct experimental conformation is provided that the films have low dielectric constants with low loss up to 10 GHz. Low-frequency measurements are also reported.
Publisher
Institute of Electrical and Electronics Engineers,Springer Nature B.V
Subject
Condensed matter: electronic structure, electrical, magnetic, and optical properties
/ Dielectric loss and relaxation
/ Dielectric properties of solids and liquids
/ Dielectrics, piezoelectrics, and ferroelectrics and their properties
/ Exact sciences and technology
/ Permittivity (dielectric function)
/ Physics
