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Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3−x Polycrystalline
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Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3−x Polycrystalline
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Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3−x Polycrystalline
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Journal Article
Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3−x Polycrystalline
2017
Overview
Indium selenides have been considered as highly efficient thermoelectric materials due to their excellent electrical and thermal properties. Herein, we report the effect of Se vacancy on the thermoelectric performance of Pb-doped In
4
Pb
0.01
Se
3−
x
polycrystalline (
x
= 0, 0.03, 0.07, and 0.1) synthesized by solid state reaction followed by spark plasma sintering. The obtained products are characterized by x-ray powder diffraction, scanning electron microscopy, and transmission electron microscopy. Owing to the increase of Se vacancy in Pb-doped compounds, the electrical resistivity is reduced by increasing carrier concentration along with the reduction of the lattice thermal conductivity. Ultimately, the In
4
Pb
0.01
Se
3−
x
(
x
= 0.07) exhibits a high ZT value of 0.95 at 690 K.
Publisher
Springer US
