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Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process
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Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process
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Journal Article
Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process
2025
Overview
We developed a 2.2 µm backside-illuminated (BSI) global shutter (GS) pixel featuring true charge-domain-correlated double sampling (CDS). To enhance the inverse parasitic light sensitivity (1/PLS), we implemented a thick-film epitaxial process incorporating a dual-depth deep trench isolation (DTI) structure. The thickness of the epitaxial substrate was 8.5 µm. This structure was designed using optical simulation. By using a thick epitaxial substrate, it is possible to reduce the amount of light that reaches the memory node. The dual-depth DTI design, with a shallower trench on the readout side, enables efficient signal transfer from the photodiode (PD) to the memory node. To achieve this structure, we developed a process for thick epitaxial substrate, and the dual-depth DTI can be fabricated with a single mask. This pixel represents the smallest charge-domain GS pixel developed to date. Despite its compact size, it achieves a high quantum efficiency (QE) of 83% (monochrome sample: wavelength = 560 nm) and a 1/PLS exceeding 10,000 (white halogen lamp with IR-cut filter). The pixel retains 80% of its peak QE at ±15° incident angles and maintains stable 1/PLS performance even under low F-number (F#) conditions.
Publisher
MDPI AG,Multidisciplinary Digital Publishing Institute (MDPI)
