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Growth of Cr2O3 on n-Silicon Substrate using AACVD and its Application as a Hole Selective Layer
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Growth of Cr2O3 on n-Silicon Substrate using AACVD and its Application as a Hole Selective Layer
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Journal Article
Growth of Cr2O3 on n-Silicon Substrate using AACVD and its Application as a Hole Selective Layer
2024
Overview
With the advancement of technology, inexpensive and highly scalable deposition techniques are extremely desirable for low-cost device fabrication. Aerosol-assisted chemical vapor deposition (AACVD) is a less complex and scalable deposition technique that works at atmospheric pressure. In this article, we demonstrate the growth of chromium oxide (Cr
2
O
3
) films onto n-type silicon substrates utilizing the AACVD method, leading to the first-ever p-Cr
2
O
3
/n-silicon heterojunction device by this method. In this paper, we have analyzed the effect of temperature and concentration of precursor solution on the morphology of the deposited films. The structural analysis of the Cr
2
O
3
films shows a closely packed uniform structure with the root mean square (RMS) value of surface roughness varying from 1.6 nm to 5.99 nm. The maximum growth rate of 45.20 nm/min on silicon substrate was observed at 500 °C with 0.05 M precursor solution. X-ray photoelectron spectroscopy (XPS) showed a mixed phase layer, with the ratio of Cr
3+
to Cr
6+
for the film deposited at 450 °C, with 0.05 M precursor solution being 1.51 and increasing with the deposition temperature. The current–voltage characteristics showed a diode-like behavior with a high cut-in voltage of about 2 V. A high cut-in voltage exists due to a significant band offset at both the conduction band and valence band exists between Cr
2
O
3
and silicon. The utilization of the AACVD technique to grow Cr
2
O
3
on silicon substrate using chromium acetylacetonate as a precursor combined with the illustration of diode characteristics provide the novelty of this work.
Publisher
Springer Netherlands,Springer Nature B.V
Subject
