Asset Details
MbrlCatalogueTitleDetail
Do you wish to reserve the book?
Water-assisted femtosecond laser drilling of 4H-SiC to eliminate cracks and surface material shedding
by
Mei, Xuesong
, Liao, Kai
, Wang, Wenjun
, Song, Hongwei
in
Brittle materials
/ CAE) and Design
/ Computer-Aided Engineering (CAD
/ Cracks
/ Crystal defects
/ Diffusion layers
/ Electronic devices
/ Engineering
/ Entrances
/ Heat affected zone
/ High aspect ratio
/ Industrial and Production Engineering
/ Laser drilling
/ Lasers
/ Mechanical Engineering
/ Media Management
/ Original Article
/ Post-production processing
/ Process parameters
/ Shedding
/ Single crystals
/ Thickness
2021
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
You are currently in the queue to collect this book. You will be notified once it is your turn to collect the book.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Water-assisted femtosecond laser drilling of 4H-SiC to eliminate cracks and surface material shedding
by
Mei, Xuesong
, Liao, Kai
, Wang, Wenjun
, Song, Hongwei
in
Brittle materials
/ CAE) and Design
/ Computer-Aided Engineering (CAD
/ Cracks
/ Crystal defects
/ Diffusion layers
/ Electronic devices
/ Engineering
/ Entrances
/ Heat affected zone
/ High aspect ratio
/ Industrial and Production Engineering
/ Laser drilling
/ Lasers
/ Mechanical Engineering
/ Media Management
/ Original Article
/ Post-production processing
/ Process parameters
/ Shedding
/ Single crystals
/ Thickness
2021
Oops! Something went wrong.
While trying to remove the title from your shelf something went wrong :( Kindly try again later!
Do you wish to request the book?
Water-assisted femtosecond laser drilling of 4H-SiC to eliminate cracks and surface material shedding
by
Mei, Xuesong
, Liao, Kai
, Wang, Wenjun
, Song, Hongwei
in
Brittle materials
/ CAE) and Design
/ Computer-Aided Engineering (CAD
/ Cracks
/ Crystal defects
/ Diffusion layers
/ Electronic devices
/ Engineering
/ Entrances
/ Heat affected zone
/ High aspect ratio
/ Industrial and Production Engineering
/ Laser drilling
/ Lasers
/ Mechanical Engineering
/ Media Management
/ Original Article
/ Post-production processing
/ Process parameters
/ Shedding
/ Single crystals
/ Thickness
2021
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Water-assisted femtosecond laser drilling of 4H-SiC to eliminate cracks and surface material shedding
Journal Article
Water-assisted femtosecond laser drilling of 4H-SiC to eliminate cracks and surface material shedding
2021
Request Book From Autostore
and Choose the Collection Method
Overview
This study adopted femtosecond laser with a wavelength of 515 nm to drill high-aspect-ratio micro through holes on a 500-μm thickness single-crystal SI-type 4H-SiC wafer. Firstly, through holes with a high aspect ratio of 20 were fabricated in air. However, the heat affect zone (HAZ), cracks, and surface material shedding around entrances and exits of the holes are inevitable in air even after chemical corrosion post-processing. In order to remove these defects, the water-assisted femtosecond laser drilling of 4H-SiC was investigated. The high-quality through holes free of cracks, surface material shedding, and HAZ were obtained under the action of internal scour and heat diffusion of water. Besides, the water layer thickness and the laser repetition frequency have a great influence on the processing quality and efficiency of the micro-holes. Finally, high-quality high-ratio-rate through micro-hole arrays on 4H-SiC were fabricated with the optimal process parameters, which is significant for the development of SiC electronic devices and the high-quality micro-fabrication of other hard and brittle materials.
Publisher
Springer London,Springer Nature B.V
Subject
This website uses cookies to ensure you get the best experience on our website.