Asset Details
Do you wish to reserve the book?
High‐Resolution and Surface‐Sensitive Tip‐Enhanced Raman Spectroscopy Characterization of Strained‐Silicon Devices through Cleanroom‐Compatible Plasmonic Probes
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
High‐Resolution and Surface‐Sensitive Tip‐Enhanced Raman Spectroscopy Characterization of Strained‐Silicon Devices through Cleanroom‐Compatible Plasmonic Probes
Do you wish to request the book?
High‐Resolution and Surface‐Sensitive Tip‐Enhanced Raman Spectroscopy Characterization of Strained‐Silicon Devices through Cleanroom‐Compatible Plasmonic Probes
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
High‐Resolution and Surface‐Sensitive Tip‐Enhanced Raman Spectroscopy Characterization of Strained‐Silicon Devices through Cleanroom‐Compatible Plasmonic Probes
2025
Overview
Reliable characterization techniques that guarantee real‐time quality control with a non‐destructive and multiscale approach are currently an essential necessity for electronic industries. Tip‐Enhanced Raman Spectroscopy (TERS) offers an excellent solution to this demand. In addition to providing chemical composition through the Raman spectrometer, TERS leverages the high lateral resolution of the coupled Atomic Force Microscope, enabling chemical and morphological characterization of samples down to the nanometer scale. This study advances the application of TERS by employing ad‐hoc prepared TiN‐coated probes, engineered to operate in cleanrooms while guaranteeing remarkable performances in terms of electromagnetic field enhancement. The subject of this analysis is a strained‐silicon‐based device, a technology meant to enhance the carrier's mobility in Complementary Metal‐Oxide‐Semiconductor (CMOS) architectures. The goal of the characterization is to detect the strain induced by a thin Si1‐xGex alloy grown on a Si(100) substrate in the silicon lattice. TERS enables not only the detection of strain in the crystal structure but also its magnitude at different levels of depth, despite the penetration depth of the laser employed. This study is a result of the activities carried out in the framework of the European Union founded project CHALLENGES included in the Horizon2020 program.
This paper demonstrates how Tip‐Enhanced Raman Spectroscopy (TERS) can detect diverse levels of strain in a SiGe‐Si structure in less than 20 nm of depth with lateral resolution under 100 nm. The measures are performed with a TiN‐coated probe, which secures a remarkable enhancement of the optical signal, while being chemically stable to allow TERS to operate in cleanroom.
Publisher
John Wiley & Sons, Inc,Wiley,Wiley-VCH
Subject
/ Physics
