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Exploiting the Modulation Effects of Epitaxial Vanadium Film in a Quasi-BIC-Based Terahertz Metamaterial
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Exploiting the Modulation Effects of Epitaxial Vanadium Film in a Quasi-BIC-Based Terahertz Metamaterial
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Exploiting the Modulation Effects of Epitaxial Vanadium Film in a Quasi-BIC-Based Terahertz Metamaterial
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Journal Article
Exploiting the Modulation Effects of Epitaxial Vanadium Film in a Quasi-BIC-Based Terahertz Metamaterial
2025
Overview
Terahertz (THz) metamaterials based on phase-change materials (PCMs) offer promising approaches to the dynamic modulation of electromagnetic responses. In this study, we design and experimentally demonstrate a tunable THz metamaterial composed of a symmetric split-ring resonator (SRR) pair, with the left halves covered by a 35 nm thick epitaxial vanadium dioxide (VO2) film, enabling the simultaneous exploitation of both permittivity- and conductivity-induced modulation mechanisms. During the metal–insulator transition (MIT) of VO2, cooperative changes in permittivity and conductivity lead to the excitation, redshift, and eventual disappearance of a quasi-bound state in the continuum (QBIC) resonance. Finite element simulations, using optical parameters of VO2 film defined by the Drude–Smith model, predict the evolution of the transmission spectra well. These results indicate that the permittivity change originating from mesoscopic carrier confinement is a non-negligible factor in THz metamaterials hybridized with VO2 film and also reveal the potential for developing reconfigurable THz metamaterials based on the dielectric modulation effects of VO2 film.
