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Yield estimation model for lithography hotspot distortions
by
Gómez, S
, Moll, F
in
Applied sciences
/ Circuits and systems
/ distortion
/ Electronics
/ Enginyeria dels materials
/ Enginyeria electrònica
/ Exact sciences and technology
/ failure analysis
/ Hot spot
/ Inventory control, production control. Distribution
/ lithography
/ lithography hotspot distortion
/ Litografia
/ Litografia per feix d'electrons
/ losses
/ Manufacturing yield
/ manufacturing yield improvement
/ Microelectronic fabrication (materials and surfaces technology)
/ nonfailure analysis
/ Operational research and scientific management
/ Operational research. Management science
/ printed layout
/ probability
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
/ unidimensional design
/ Yield estimation
/ yield estimation model
/ Yield loss
/ Yield modeling
/ Àrees temàtiques de la UPC
2013
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Yield estimation model for lithography hotspot distortions
by
Gómez, S
, Moll, F
in
Applied sciences
/ Circuits and systems
/ distortion
/ Electronics
/ Enginyeria dels materials
/ Enginyeria electrònica
/ Exact sciences and technology
/ failure analysis
/ Hot spot
/ Inventory control, production control. Distribution
/ lithography
/ lithography hotspot distortion
/ Litografia
/ Litografia per feix d'electrons
/ losses
/ Manufacturing yield
/ manufacturing yield improvement
/ Microelectronic fabrication (materials and surfaces technology)
/ nonfailure analysis
/ Operational research and scientific management
/ Operational research. Management science
/ printed layout
/ probability
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
/ unidimensional design
/ Yield estimation
/ yield estimation model
/ Yield loss
/ Yield modeling
/ Àrees temàtiques de la UPC
2013
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Yield estimation model for lithography hotspot distortions
by
Gómez, S
, Moll, F
in
Applied sciences
/ Circuits and systems
/ distortion
/ Electronics
/ Enginyeria dels materials
/ Enginyeria electrònica
/ Exact sciences and technology
/ failure analysis
/ Hot spot
/ Inventory control, production control. Distribution
/ lithography
/ lithography hotspot distortion
/ Litografia
/ Litografia per feix d'electrons
/ losses
/ Manufacturing yield
/ manufacturing yield improvement
/ Microelectronic fabrication (materials and surfaces technology)
/ nonfailure analysis
/ Operational research and scientific management
/ Operational research. Management science
/ printed layout
/ probability
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
/ unidimensional design
/ Yield estimation
/ yield estimation model
/ Yield loss
/ Yield modeling
/ Àrees temàtiques de la UPC
2013
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Yield estimation model for lithography hotspot distortions
Journal Article
Yield estimation model for lithography hotspot distortions
2013
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Overview
A yield formulation model to estimate the amount of lithography distortion expected in a printed layout is proposed. The yield formulation relates the probability of non-failure of a lithography hotspot with the yield loss. The application of the yield model is demonstrated for three different layout configurations showing that unidimensional designs may improve manufacturing yield.
Publisher
The Institution of Engineering and Technology,Institution of Engineering and Technology,Institution of Electrical Engineers
Subject
/ Exact sciences and technology
/ Hot spot
/ Inventory control, production control. Distribution
/ lithography hotspot distortion
/ Litografia per feix d'electrons
/ losses
/ manufacturing yield improvement
/ Microelectronic fabrication (materials and surfaces technology)
/ Operational research and scientific management
/ Operational research. Management science
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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