Journal Article

Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release

Yin, Yuling, Zhang, Huisheng, He, Jun, Zhou, Zheng, Chen, Jie, Zhang, Yushuang, Zhang, Kai, Xu, Yang, Wang, Junyong, Fei, Linfeng, Zhang, Rencong, Pan, Anlian, Yuan, Qinghong, Cheng, Ruiqing, Dong, Zhuo, Chen, Cheng, Li, Jie, Yu, Qiang, Zhang, Yan, Xu, Xiaohong, Li, Chang

2023

Overview

Black phosphorus (BP), a fascinating semiconductor with high mobility and a tunable direct bandgap, has emerged as a candidate beyond traditional silicon-based devices for next-generation electronics and optoelectronics. The ability to grow large-scale, high-quality BP films is a prerequisite for scalable integrated applications but has thus far remained a challenge due to unmanageable nucleation events. Here we develop a sustained feedstock release strategy to achieve subcentimetre-size single-crystal BP films by facilitating the lateral growth mode under a low nucleation rate. The as-grown single-crystal BP films exhibit high crystal quality, which brings excellent field-effect electrical properties and observation of pronounced Shubnikov–de Haas oscillations, with high mobilities up to ~6,500 cm2 V−1 s−1 at low temperatures. We further extend this approach to the growth of single-crystal BP alloy films, which broaden the infrared emission regime of BP from 3.7 μm to 6.9 μm at room temperature. This work will greatly facilitate the development of high-performance electronics and optoelectronics based on BP family materials.Subcentimetre-size black phosphorous and its alloy films have been achieved on conventional substrates through sustained feedstock release design, and exhibit high crystalline quality and composition-dependent bandgap tunability.

• Publisher: Nature Publishing Group
• Subject: Crystal growth / Electrical properties / Electronics / Energy gap / Low temperature / Nucleation / Optoelectronics / Phosphorus / Raw materials / Room temperature / Single crystals / Substrates