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Fabrication and characterization study of ZnTe/n-Si heterojunction solar cell application
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Fabrication and characterization study of ZnTe/n-Si heterojunction solar cell application
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Journal Article
Fabrication and characterization study of ZnTe/n-Si heterojunction solar cell application
2018
Overview
Different thicknesses (150 250 and 350) ±20 nm has been deposited on the glass substrate and nSi wafer to fabricate ZnTe/n-Si heterojunction solar cell by vacuum evaporation technique Structural optical electrical and photovoltaic properties are investigated for the samples. The structural characteristics studied via X ray analyses indicated that the films are polycrystalline besides having a cubic (zinc blende) structure also average diameter and surface roughness calculated from AFM images The optical measurements of the deposited films were performed in different thicknesses to determine the transmission spectrum as a function of incident wavelength in the range of wavelength (4001000) nm and the optical energy gap calculated from the optical absorption spectra was found to reduse with thickness The IV characteristic at (dark and illuminated) and CV measurement for ZnTe/n-Si heterojunction shows the good rectifying behaviour under dark condition. The measurements of opencircuit voltage (VOC) short-circuit current density (JSC) fill factor (FF) and quantum fficiencies of the ZnTe/n-Si heterojunction are calculated for all samples The results of these studies are presented and discussed in this paper.
Publisher
IOP Publishing
Subject
