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Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications

by Tsuchiya, Yoichi , Kikkawa, Koichi , Hayashi, Hiroaki , Sakai, Naoki , Wakejima, Akio , Itoh, Kenji , Suda, Jun , Takahashi, Hidemasa , Yagyu, Eiji , Ando, Yuji

in Capacitance bridges / Dependence / Diodes / Efficiency / Electrodes / Etching / Gallium nitrides / High electron mobility transistors / Junction and barrier diodes / Other field effect devices / R&D / Rectennas / Research & development / Semiconductor device modelling, equivalent circuits, design and testing / Single antennas / Threshold voltage

2021

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Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications

by Tsuchiya, Yoichi , Kikkawa, Koichi , Hayashi, Hiroaki , Sakai, Naoki , Wakejima, Akio , Itoh, Kenji , Suda, Jun , Takahashi, Hidemasa , Yagyu, Eiji , Ando, Yuji

2021

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Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications

by Tsuchiya, Yoichi , Kikkawa, Koichi , Hayashi, Hiroaki , Sakai, Naoki , Wakejima, Akio , Itoh, Kenji , Suda, Jun , Takahashi, Hidemasa , Yagyu, Eiji , Ando, Yuji

2021

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Journal Article

Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications

Tsuchiya, Yoichi,

Kikkawa, Koichi,

Hayashi, Hiroaki,

Sakai, Naoki,

Wakejima, Akio,

Itoh, Kenji,

Suda, Jun,

Takahashi, Hidemasa,

Yagyu, Eiji,

Ando, Yuji

2021

Overview

Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna. A wide recessed gate GaN GADs were prepared and the recess length dependence of their electrical characteristics was investigated. Typical DC characteristics of the HEMTs are a threshold voltage (Vth) of +0.3 V and a maximum drain current (Imax) of 300 mA/mm. The GADs showed the characteristics of maximum forward current (If) of 350 mA/mm, reverse breakdown voltage (BVr) of 40 V, and off‐state capacitance (Coff) of 0.28 pF/mm by using optimized recess length. We constructed SPICE model of the GADs. The SPICE simulation predicted a rectifier efficiency of 81% and a DC output power of 10 W for bridge type 5.8 GHz rectifier using four GADs with each gate width of 0.8 mm.

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Publisher

John Wiley & Sons, Inc,Wiley

Subject

/ Diodes

/ Etching