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Composition Dependence of Crystal Structures and Electrical Properties of Ca-Mg-Si Films Prepared by Sputtering
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Composition Dependence of Crystal Structures and Electrical Properties of Ca-Mg-Si Films Prepared by Sputtering
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Journal Article
Composition Dependence of Crystal Structures and Electrical Properties of Ca-Mg-Si Films Prepared by Sputtering
2020
Overview
Ca-Mg-Si ternary films were deposited at 300–335°C on (001)Al2O3 substrates by a radio-frequency magnetron sputtering. Amorphous films were obtained for a wide range of compositions but not for single-phase CaMgSi. For all compositions, the electrical conductivity of the as-deposited films increased with the increase in temperature up to 400°C. The conduction type was controlled mainly by changing the Si/(Ca + Mg + Si) ratios of the films, and films with p- and n-type conductions were observed respectively with Si/(Ca + Mg + Si) ratios below 0.6 and above 0.7 along a fixed Ca/(Ca + Mg) ratio of about 0.50. A high thermoelectric power factor above 140 μW/(m K2) with p-type conduction was obtained at 400°C for an amorphous-phase film.
Publisher
Springer Nature B.V
Subject
