Journal Article

Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation

Elgaid, Khaled, Alathbah, Moath

2022

Overview

In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate configuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconductance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance.

• Publisher: MDPI AG,MDPI
• Subject: AlGaN/AlN/GaN HEMTs / AlGaN/GaN HEMTs / Aluminum gallium nitrides / Chemical vapor deposition / Current leakage / device isolation / Direct current / Gallium nitrides / gate leakage / HEMT mesa etch / High electron mobility transistors / High temperature / Ion implantation / Organic chemicals / planar gatefeed / Plasma etching / Radio frequency / Semiconductor devices / Transconductance / Transplants & implants