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Abnormal electric transport property and magnetoresistance stability of La-Sr-K-Mn-O system
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Abnormal electric transport property and magnetoresistance stability of La-Sr-K-Mn-O system
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Journal Article
Abnormal electric transport property and magnetoresistance stability of La-Sr-K-Mn-O system
2013
Overview
The perovskite samples La1-x（Sr1-yKy）xMnO3 （y = 0.0, 0.2, 04, 0.6, 0.8） were prepared by the solid-state reaction method with comparatively low sintering tem- perature and with comparatively short sintering time, and the electric transport property and temperature stability of MR of this system were studied. The p-T curves show the abnormal phenomenon that with the increase of K doping amount, resistivity increases, and the insulator-metal transition temperature decreases, which is because the influence of the occupation disorder degree of A-site ions σ2 on the electric transport property of perovskite manga- nites is larger than that of the radius of A-site ions （rA）. In the temperature range below 225 K, MR increases contin- uously with the decrease of temperature, which is the characteristic of low-field magnetoresistance; in the com- paratively wide temperature range near 250 K, the MR- T curves of all the samples are comparatively fiat, and the value of MR almost does not change with temperature, which shows the temperature stability of magnetoresis- tance, and can be explained by the competition between the low-field magnetoresistance induced by spin-dependent tunneling of surface phase and the intrinsic magnetoresis- tance of grain phase. The magnetoresistance value of the sample with y = 0.8 keeps at （7.92 ±0.36） % in the very wide temperature range of 225-275 K, and this is a goodreference for the preparation of this kind of sample with practical application value in the future.
Publisher
Nonferrous Metals Society of China,Springer Nature B.V,School of Mechanical and Electronic Engineering, Suzhou University, Suzhou 234000, China%Cultivating Base of Anhui Key Laboratory of Spintronics and Nano-materials Research, Suzhou 234000, China,Cultivating Base of Anhui Key Laboratory of Spintronics and Nano-materials Research, Suzhou 234000, China
