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Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing
by
Chernyshova, M
, Wojciechowski, T
, Demchenko, I N
, Domagala, J
, Sadowski, J
, Syryanyy, Y
, Melikhov, Y
, Konstantynov, P
in
Annealing
/ Buffer layers
/ Density functional theory
/ Diffusion
/ Elastic scattering
/ Fine structure
/ Fourier transforms
/ Fusion, Plasma and Space Physics
/ Fusion, plasma och rymdfysik
/ Fysik
/ Molecular beam epitaxy
/ Natural Sciences
/ Naturvetenskap
/ Physical Sciences
/ Physics
/ Spectra
/ Substrates
/ X ray absorption
2016
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Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing
by
Chernyshova, M
, Wojciechowski, T
, Demchenko, I N
, Domagala, J
, Sadowski, J
, Syryanyy, Y
, Melikhov, Y
, Konstantynov, P
in
Annealing
/ Buffer layers
/ Density functional theory
/ Diffusion
/ Elastic scattering
/ Fine structure
/ Fourier transforms
/ Fusion, Plasma and Space Physics
/ Fusion, plasma och rymdfysik
/ Fysik
/ Molecular beam epitaxy
/ Natural Sciences
/ Naturvetenskap
/ Physical Sciences
/ Physics
/ Spectra
/ Substrates
/ X ray absorption
2016
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Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing
by
Chernyshova, M
, Wojciechowski, T
, Demchenko, I N
, Domagala, J
, Sadowski, J
, Syryanyy, Y
, Melikhov, Y
, Konstantynov, P
in
Annealing
/ Buffer layers
/ Density functional theory
/ Diffusion
/ Elastic scattering
/ Fine structure
/ Fourier transforms
/ Fusion, Plasma and Space Physics
/ Fusion, plasma och rymdfysik
/ Fysik
/ Molecular beam epitaxy
/ Natural Sciences
/ Naturvetenskap
/ Physical Sciences
/ Physics
/ Spectra
/ Substrates
/ X ray absorption
2016
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Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing
Journal Article
Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing
2016
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Overview
The redistribution of Mn atoms in Ga1-xMnxAs layer during medium-temperature annealing, 250-450 oC, by Mn K-edge X-ray absorption fine structure (XAFS) recorded at ALBA facility, was studied. For this purpose Ga1-xMnxAs thin layer with x=0.01 was grown on AlAs buffer layer deposited on GaAs(100) substrate by molecular beam epitaxy (MBE) followed by annealing. The examined layer was detached from the substrate using a \"lift-off\" procedure in order to eliminate elastic scattering in XAFS spectra. Fourier transform analysis of experimentally obtained EXAFS spectra allowed to propose a model which describes a redistribution diffusion of Mn atoms in the host matrix. Theoretical XANES spectra, simulated using multiple scattering formalism (FEFF code) with the support of density functional theory (WIEN2k code), qualitatively describe the features observed in the experimental fine structure.
Publisher
IOP Publishing
Subject
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