Asset Details
Do you wish to reserve the book?
In situ MEMS testing: correlation of high-resolution X-ray diffraction with mechanical experiments and finite element analysis
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
In situ MEMS testing: correlation of high-resolution X-ray diffraction with mechanical experiments and finite element analysis
Do you wish to request the book?
In situ MEMS testing: correlation of high-resolution X-ray diffraction with mechanical experiments and finite element analysis
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
In situ MEMS testing: correlation of high-resolution X-ray diffraction with mechanical experiments and finite element analysis
2017
Overview
New methods are needed in microsystems technology for evaluating microelectromechanical systems (MEMS) because of their reduced size. The assessment and characterization of mechanical and structural relations of MEMS are essential to assure the long-term functioning of devices, and have a significant impact on design and fabrication.
Within this study a concept for the investigation of mechanically loaded MEMS materials on an atomic level is introduced, combining high-resolution X-ray diffraction (HRXRD) measurements with finite element analysis (FEA) and mechanical testing. In situ HRXRD measurements were performed on tensile loaded single crystal silicon (SCSi) specimens by means of profile scans and reciprocal space mapping (RSM) on symmetrical (004) and (440) reflections. A comprehensive evaluation of the rather complex XRD patterns and features was enabled by the correlation of measured with simulated, 'theoretical' patterns. Latter were calculated by a specifically developed, simple and fast approach on the basis of continuum mechanical relations. Qualitative and quantitative analysis confirmed the admissibility and accuracy of the presented method. In this context [001] Poisson's ratio was determined providing an error of less than 1.5% with respect to analytical prediction. Consequently, the introduced procedure contributes to further going investigations of weak scattering being related to strain and defects in crystalline structures and therefore supports investigations on materials and devices failure mechanisms.
Publisher
Taylor & Francis,Taylor & Francis Ltd,Taylor & Francis Group
Subject
10 Engineering and Structural materials
/ 201 Electronics / Semiconductor / TCOs
/ 303 Mechanical / Physical processing
/ 401 1st principle calculations
/ 504 X-ray / Neutron diffraction and scattering
/ 600 Advance material characterization
/ 600 Mechanical testing and Finite Element Analysis
/ Engineering and Structural Materials
/ finite element analysis (FEA)
/ High-resolution X-ray diffraction (HRXRD)
/ in situ material characterization
/ Mapping
/ Microelectromechanical systems
/ Review
/ Supports
