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Intrinsic Bond-Centered Electronic Glass with Unidirectional Domains in Underdoped Cuprates
Intrinsic Bond-Centered Electronic Glass with Unidirectional Domains in Underdoped Cuprates
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Intrinsic Bond-Centered Electronic Glass with Unidirectional Domains in Underdoped Cuprates
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Intrinsic Bond-Centered Electronic Glass with Unidirectional Domains in Underdoped Cuprates
Intrinsic Bond-Centered Electronic Glass with Unidirectional Domains in Underdoped Cuprates

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Intrinsic Bond-Centered Electronic Glass with Unidirectional Domains in Underdoped Cuprates
Intrinsic Bond-Centered Electronic Glass with Unidirectional Domains in Underdoped Cuprates
Journal Article

Intrinsic Bond-Centered Electronic Glass with Unidirectional Domains in Underdoped Cuprates

2007
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Overview
Removing electrons from the CuO₂ plane of cuprates alters the electronic correlations sufficiently to produce high-temperature superconductivity. Associated with these changes are spectral-weight transfers from the high-energy states of the insulator to low energies. In theory, these should be detectable as an imbalance between the tunneling rate for electron injection and extraction--a tunneling asymmetry. We introduce atomic-resolution tunneling-asymmetry imaging, finding virtually identical phenomena in two lightly hole-doped cuprates: Ca₁.₈₈Na₀.₁₂CuO₂Cl₂ and Bi₂Sr₂Dy₀.₂Ca₀.₈Cu₂O₈₊δ. Intense spatial variations in tunneling asymmetry occur primarily at the planar oxygen sites; their spatial arrangement forms a Cu-O-Cu bond-centered electronic pattern without long-range order but with 4a₀-wide unidirectional electronic domains dispersed throughout (a₀: the Cu-O-Cu distance). The emerging picture is then of a partial hole localization within an intrinsic electronic glass evolving, at higher hole densities, into complete delocalization and highest-temperature superconductivity.