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A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon
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Journal Article
A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon
2011
Overview
The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier height Φbe increases and ideality factor decreases from 0.26 eV and 6.36 at 120 K to 0.70 eV and 1.91 at 360 K respectively. The variation of effective Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneties at the metal-semiconductor interface. We have also discussed whether or not the junction current has been connected themionic field emission (TFE) mechanisms.
Publisher
Sumy State University, Journal of Nano - and Electronic Physics
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