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Zn1−xSnxOy Buffer Layer Deposited by Chemical Bath Deposition for Low and Wide Bandgap Cu(In, Ga)Se2 Solar Cells
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Zn1−xSnxOy Buffer Layer Deposited by Chemical Bath Deposition for Low and Wide Bandgap Cu(In, Ga)Se2 Solar Cells
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Journal Article
Zn1−xSnxOy Buffer Layer Deposited by Chemical Bath Deposition for Low and Wide Bandgap Cu(In, Ga)Se2 Solar Cells
2026
Overview
Cu(In, Ga)Se2 (CIGSe) solar cells with a tunable bandgap stand out as a promising technology for tandem applications. Addressing the environmental concerns associated with Cd‐based buffers, this study investigates the suitability of zinc tin oxide (ZTO), deposited via chemical bath deposition (CBD), as a Cd‐free alternative for both low‐bandgap CIGSe and wide‐bandgap (Ag, Cu)(In, Ga)Se2 (ACIGSe) solar cells. Best ZTO‐buffered devices exhibit competitive power conversion efficiencies (PCE) of 14% and 7% for low‐bandgap and wide‐bandgap absorbers, respectively. The optimal tin concentration for ZTO buffer layers vary, with 10% [Sn]/([Sn] + [Zn]) ratio (TTZ) identified as optimal for wide‐gap ACIGSe and 20% TTZ for low‐gap CIGSe. A performance decline beyond optimal tin concentrations could be linked to losses in open‐circuit voltage. In summary, ZTO‐based devices showcase promising photovoltaic performance, emphasizing ZTO's potential as a practical and nontoxic alternative, deposited by CBD, to traditional CdS for diverse CIGSe solar cell applications. Considering the importance of Cu(In, Ga)Se2 (CIGS) solar cells for tandem applications, Cd‐free low and wide‐bandgap CIGSe solar cells are studied, based on the chemical bath deposition of Zn–Sn–O as an alternative buffer layer. The fabricated solar cells show a similar performance as CdS‐based reference, which proves the viability of this nontoxic buffer layer.
Publisher
Wiley-VCH
