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Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole –MWCNT composite /TiO2/Al2O3/n-Si structure
Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole –MWCNT composite /TiO2/Al2O3/n-Si structure
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Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole –MWCNT composite /TiO2/Al2O3/n-Si structure
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Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole –MWCNT composite /TiO2/Al2O3/n-Si structure
Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole –MWCNT composite /TiO2/Al2O3/n-Si structure

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Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole –MWCNT composite /TiO2/Al2O3/n-Si structure
Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole –MWCNT composite /TiO2/Al2O3/n-Si structure
Journal Article

Novel negative capacitance, conductance at high and low frequencies in Au/Polypyrrole –MWCNT composite /TiO2/Al2O3/n-Si structure

2021
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Overview
The paper presents a new approach based on the appearance of negative capacitance (NC) at high and low frequencies; previously, researchers agreed that NC only occurred at high or low frequencies. For the first time, we synthesized Au/polypyrrole/MWCNT composite/TiO ₂ /Al2O ₃ /n-Si/Al structure for use in electronic and supercapacitor applications. The structural, electrical, and dielectric properties were investigated by x-ray diffraction, FTIR, Raman spectroscopy, I-V, and C-V measurements. The results revealed that for all working voltages and temperatures, negative capacitance and conductance occurred at high frequencies between 2 × 10 ⁷ and 10 ⁷ Hz. Similarly, the phenomena of negative capacitance occurred at low frequencies (100, 10) Hz. The capacitance-voltage experiments were used to perform the analysis of the variation of capacitance and conductance with frequency, voltage, and temperature. The polypyrrole, MWCNT composite /TiO ₂ /Al ₂ O ₃ /n-Si structure exhibits diode behavior and has a high rectification ratio. I-V measurements were used to investigate ideality factors, barrier height, series and shunt resistance#, and rectification ratio.