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Synergetic Contributions of High Quenching Concentration and Tuned Square Antiprism Geometry Boosting Far‐Red Emission of Eu3+ with Near‐Unit Efficiency
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Synergetic Contributions of High Quenching Concentration and Tuned Square Antiprism Geometry Boosting Far‐Red Emission of Eu3+ with Near‐Unit Efficiency
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Synergetic Contributions of High Quenching Concentration and Tuned Square Antiprism Geometry Boosting Far‐Red Emission of Eu3+ with Near‐Unit Efficiency
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Journal Article
Synergetic Contributions of High Quenching Concentration and Tuned Square Antiprism Geometry Boosting Far‐Red Emission of Eu3+ with Near‐Unit Efficiency
2025
Overview
Far‐red phosphors have emerged as a desirable research hotspot owing to their critical role in promoting plant growth. Especially, Eu3+ ions typically present the 5D0→7FJ (J = 0, 1, 2, 3, 4) transitions, which overlap with the far‐red light required for plant photosynthesis. However, achieving high‐efficiency far‐red emission of Eu3+ remains challenging due to weak 5D0→7F4 transition and concentration quenching. The study constructs two anomalously efficient far‐red garnet phosphors A3Sc2C3O12 (A = Y3+, Gd3+. C = Al3+, Ga3+):Eu3+. A high‐resolution STEM measurement equipped with an aberration corrector provides the direct proofs for both the [EuO8] configuration‐dependent strong 5D0→7F4 and the origin of high quenching concentration. Excitedly, a two‐component substitution (replacing Y3+‐Al3+ with Gd3+‐Ga3+) triggers a near‐unity internal quantum efficiency (IQE = 99.01%) and high external quantum efficiency (EQE = 38.73%) in Gd3Sc2Ga3O12:60%Eu3+, resulting from the effective modulation of 5D0→7F4/7F2 transitions. A far‐red LEDs device based on Gd3Sc2Ga3O12:60%Eu3+ exhibits an output power of 113 mW at 300 mA. Subsequently, practical applications for promoting plant growth underscore the significance of these findings. This work opens a new path for the development of highly efficient far‐red phosphors via the synergistic effect of Eu3+ square antiprism configuration and high quenching concentration. Two isostructural garnet phosphors A3Sc2C3O12 (A = Y3+, Gd3+. C = Al3+, Ga3+):Eu3+ are developed to deal with the puzzles of weak 5D0→7F4 transition and concentration quenching. Advanced STEM technology provides the direct proofs for both the [EuO8] configuration‐dependent strong 5D0→7F4 and the origin of high quenching concentration. Meanwhile, the 5D0→7F4/7F2 transition is effectively modulated to realize a near‐unity IQE.
Publisher
John Wiley & Sons, Inc,John Wiley and Sons Inc,Wiley
