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Study of MAX phase based Schottky interfacial structure: the case of electron-beam deposited epitaxial Cr.sub.2AlC film on p-Si
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Study of MAX phase based Schottky interfacial structure: the case of electron-beam deposited epitaxial Cr.sub.2AlC film on p-Si
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Study of MAX phase based Schottky interfacial structure: the case of electron-beam deposited epitaxial Cr.sub.2AlC film on p-Si
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Journal Article
Study of MAX phase based Schottky interfacial structure: the case of electron-beam deposited epitaxial Cr.sub.2AlC film on p-Si
2023
Overview
In recent times, due to their highly stable and radiation tolerant nature, interest toward feasibility of developing MAX phase-based applications has suddenly surged. In this context, we for the first time report a comprehensive spin-dependent transport study of Cr.sub.2AlC@p-Si-based thin film interfacial structure. Phase purity of the fabricated epitaxial Cr.sub.2AlC thin film grown by electron-beam deposition was confirmed from structural, vibrational and elemental analysis. Transport studies showed n-type metallic nature of the deposited Cr.sub.2AlC films. Low-temperature transport/magnetic measurements across the interface have shown spin-dependent Schottky behavior. Our results demonstrate the potential of Cr.sub.2AlC@p-Si as a novel Schottky interfacial structure for the development of more complex device applications.
