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g-C.sub.3N.sub.4 quantum dots decorated on urchin-like TiO.sub.2 nanostructures for the photoelectrochemical water splitting
g-C.sub.3N.sub.4 quantum dots decorated on urchin-like TiO.sub.2 nanostructures for the photoelectrochemical water splitting
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g-C.sub.3N.sub.4 quantum dots decorated on urchin-like TiO.sub.2 nanostructures for the photoelectrochemical water splitting
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g-C.sub.3N.sub.4 quantum dots decorated on urchin-like TiO.sub.2 nanostructures for the photoelectrochemical water splitting
g-C.sub.3N.sub.4 quantum dots decorated on urchin-like TiO.sub.2 nanostructures for the photoelectrochemical water splitting

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g-C.sub.3N.sub.4 quantum dots decorated on urchin-like TiO.sub.2 nanostructures for the photoelectrochemical water splitting
g-C.sub.3N.sub.4 quantum dots decorated on urchin-like TiO.sub.2 nanostructures for the photoelectrochemical water splitting
Journal Article

g-C.sub.3N.sub.4 quantum dots decorated on urchin-like TiO.sub.2 nanostructures for the photoelectrochemical water splitting

2024
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Overview
This work employs a straightforward, simple and low-cost method to grow g-C.sub.3N.sub.4 quantum dots (QDs) on a distinctive morphology of urchin-like TiO.sub.2 (u-TiO.sub.2) nanostructures. u-TiO.sub.2 on Ti foil was prepared by the hydrothermal method under the optimized experimental parameters, including hydrothermal time and temperature. Then, for the activation of u-TiO.sub.2 under visible light irradiation, g-C.sub.3N.sub.4 quantum dots (g-C.sub.3N.sub.4 QDs) were decorated on u-TiO.sub.2 by combining a wet pre-coating and subsequent thermal evaporation procedure. The experimental parameters of the process were examined to determine the optimized conditions for the highest photocurrent density (J.sub.ph) in a photoelectrochemical (PEC) cell. g-C.sub.3N.sub.4 QDs were elucidated by transmission electron microscopy (TEM) and diffuse reflectance spectroscopy (DRS). HRTEM results revealed a uniform distribution of anchored g-C.sub.3N.sub.4 QDs on the surface of u-TiO.sub.2 with a mean size of about 10 nm. Optimized decoration of g-C.sub.3N.sub.4 QDs on the u-TiO.sub.2 dramatically enhanced J.sub.ph under simulated sunlight irradiation from 0.06 mA/cm.sup.2 for pristine u-TiO.sub.2 up to 0.12 mA/cm.sup.2 for TiO.sub.2/g-C.sub.3N.sub.4QDs photoanodes under the biased potential of 0.5 V versus Ag/AgCl. Based on the results, the type-II heterostructure of u-TiO.sub.2/g-C.sub.3N.sub.4 facilitates electron-hole separation and charge carrier transfer, thereby improving the PEC performance of the proposed photoanode.
Publisher
Springer
Subject