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A GMR device based on a magnetic nanostructure with a δ-doping
by
Kong, Yong-Hong
, Fu, Xi
, Gong, Yan-Jun
, Tang, Zheng-Hua
, Liu, Xu-Hui
in
Controllability
/ Doping
/ Electrical Engineering
/ Energy
/ Engineering
/ Ferromagnetism
/ Giant magnetoresistance
/ Heterostructures
/ Information storage
/ Magnetic fields
/ Magnetoresistivity
/ Mathematical and Computational Engineering
/ Mathematical and Computational Physics
/ Mechanical Engineering
/ Optical and Electronic Materials
/ Theoretical
2017
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A GMR device based on a magnetic nanostructure with a δ-doping
by
Kong, Yong-Hong
, Fu, Xi
, Gong, Yan-Jun
, Tang, Zheng-Hua
, Liu, Xu-Hui
in
Controllability
/ Doping
/ Electrical Engineering
/ Energy
/ Engineering
/ Ferromagnetism
/ Giant magnetoresistance
/ Heterostructures
/ Information storage
/ Magnetic fields
/ Magnetoresistivity
/ Mathematical and Computational Engineering
/ Mathematical and Computational Physics
/ Mechanical Engineering
/ Optical and Electronic Materials
/ Theoretical
2017
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While trying to remove the title from your shelf something went wrong :( Kindly try again later!
Do you wish to request the book?
A GMR device based on a magnetic nanostructure with a δ-doping
by
Kong, Yong-Hong
, Fu, Xi
, Gong, Yan-Jun
, Tang, Zheng-Hua
, Liu, Xu-Hui
in
Controllability
/ Doping
/ Electrical Engineering
/ Energy
/ Engineering
/ Ferromagnetism
/ Giant magnetoresistance
/ Heterostructures
/ Information storage
/ Magnetic fields
/ Magnetoresistivity
/ Mathematical and Computational Engineering
/ Mathematical and Computational Physics
/ Mechanical Engineering
/ Optical and Electronic Materials
/ Theoretical
2017
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A GMR device based on a magnetic nanostructure with a δ-doping
Journal Article
A GMR device based on a magnetic nanostructure with a δ-doping
2017
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Overview
We study how to manipulate by the
δ
-doping a giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic stripes on top and bottom of the semiconductor
GaAs/Al
x
Ga
1
-
x
As
heterostructure. We demonstrate an obvious GMR effect in the device with a
δ
-doping. We also reveal that the magnetoresistance ratio depends not only on the weight but also on the position of the
δ
-doping. These interesting results will be helpful for designing controllable GMR devices.
Publisher
Springer US,Springer Nature B.V
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