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Electroluminescence performances of 1,1-bis(4-(N,N-dimethylamino)phenyl)-2,3,4,5-tetraphenylsilole based polymers in three cathode architectures
by
LIU ZhiTian HU SuJun ZHANG LinHua CHEN JunWu PENG JunBiao CAO Yong
in
HOMO能级
/ 二甲基
/ 二甲氨基
/ 电致发光性能
/ 聚合物发光二极管
/ 苯基取代
/ 设备制造
/ 阴极结构
2013
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Electroluminescence performances of 1,1-bis(4-(N,N-dimethylamino)phenyl)-2,3,4,5-tetraphenylsilole based polymers in three cathode architectures
by
LIU ZhiTian HU SuJun ZHANG LinHua CHEN JunWu PENG JunBiao CAO Yong
in
HOMO能级
/ 二甲基
/ 二甲氨基
/ 电致发光性能
/ 聚合物发光二极管
/ 苯基取代
/ 设备制造
/ 阴极结构
2013
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Electroluminescence performances of 1,1-bis(4-(N,N-dimethylamino)phenyl)-2,3,4,5-tetraphenylsilole based polymers in three cathode architectures
Journal Article
Electroluminescence performances of 1,1-bis(4-(N,N-dimethylamino)phenyl)-2,3,4,5-tetraphenylsilole based polymers in three cathode architectures
2013
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Overview
A new silole monomer with two 4-(N,N-dimethylamino)phenyl substitutions on silicon atom as designed and synthesized. Three copolymers PF-N-HPS1, PF-N-HPS10 and PF-N-HPS20 were then obtained by copolymerizations of 2,7-fluorene deriva- tives with the silole monomer at feed ratios of 1%, 10%, and 20%. Their UV-vis absorption, electrochemical, photolumines- cent, and electroluminescent (EL) properties were investigated. PF-N-HPS possessed HOMO levels of -5.25-5.58 eV, and showed green emissions. Using PF-N-HPS as the emissive layer, three different polymer light-emitting diodes were fabricated as device A with ITO/PEDOT/PF-N-HPS/A1, device B with ITO/PEDOT/PF-N-HPS/Ba/A1, and device C with ITO/PEDOT/ PF-N-HPS/TPBI/Ba/A1. For the device A, PF-N-HPS only showed very low EL efficiency of 0.06-0.33 cd/A, indicating that the A1 cathode could not inject electron efficiently to the emissive polymers containing the 4-(N,N-dimethylamino)phenyl groups. For the device B, low work function Ba supplied better electron injections, and the EL efficiency could be improved to 0.85-1.44 cd/A. TPBI with a deep HOMO level of -6.2 eV could enhance electron transport and hole blocking. Thus modi- fied recombinations and largely elevated EL efficiency of 4.56-7.96 cd/A were achieved for the device C. The separation of the emissive layer and metal cathode with the TPBI layer may also suppress exciton quenching at the cathode interface.
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