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Selective Area Epitaxy of InP/GaInP.sub.2Quantum Dots from Metal-Organic Compounds
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Selective Area Epitaxy of InP/GaInP.sub.2Quantum Dots from Metal-Organic Compounds
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Journal Article
Selective Area Epitaxy of InP/GaInP.sub.2Quantum Dots from Metal-Organic Compounds
2024
Overview
Experiments on the growth of self-assembled InP/GaInP.sub.2 quantum dots in dielectric mask 0.1-1 m apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO.sub.2 and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.
Publisher
Springer
Subject
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