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The Influence of a-SiCsub.x:H and a-SiOsub.x:H Barrier Layers Embedded in the p/i and i/n Interfaces on the Performance of a-Si:H p-i-n Solar Cells
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The Influence of a-SiCsub.x:H and a-SiOsub.x:H Barrier Layers Embedded in the p/i and i/n Interfaces on the Performance of a-Si:H p-i-n Solar Cells
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The Influence of a-SiCsub.x:H and a-SiOsub.x:H Barrier Layers Embedded in the p/i and i/n Interfaces on the Performance of a-Si:H p-i-n Solar Cells
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Journal Article
The Influence of a-SiCsub.x:H and a-SiOsub.x:H Barrier Layers Embedded in the p/i and i/n Interfaces on the Performance of a-Si:H p-i-n Solar Cells
2026
Overview
In this work, hydrogenated amorphous silicon carbide (a-SiC[sub.x]:H) and hydrogenated amorphous silicon oxide (a-SiO[sub.x]:H) films with similar optical bandgaps (E [sub.g]), refractive indices (n), and extinction coefficients (k) were fabricated using pulse-wave modulation (PWM) plasma technology by controlling the plasma turn-on to turn-off time ratio (t [sub.on]/t [sub.off]). These films were placed at the 1/5 position of the p/i and i/n interfaces of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells to investigate their influence on solar cell performance. The experimental results confirmed that the deviations in E [sub.g], n, and k were controlled to within 0.2%, 1.4%, and 4.1%, respectively. Under these conditions, placing a-SiC[sub.x]:H and a-SiO[sub.x]:H films at the p/i and i/n interfaces successfully increased the open-circuit voltage (V [sub.oc]). However, this also led to a decrease in the short-circuit current due to valence band (ΔE [sub.v]) or conduction band (ΔE [sub.c]) offsets. The reduction in cell fill factor (FF) and efficiency (η) caused by placing a-SiC[sub.x]:H and a-SiO[sub.x]:H films at the p/i interface was greater than that caused by placing them at the i/n interface. Placing the a-SiC[sub.x]:H film at the p/i interface significantly improved the V [sub.oc] to 0.8998 V. Due to the n-type doping effect of oxygen atoms, the a-SiO[sub.x]:H film exhibited the lowest FF of 43.99% and η of 4.850% at the p/i interface; however, when placed at the i/n interface, it yielded an FF of 67.38% and an η of 7.43%, which are comparable to the standard cell. Appropriately placing the a-SiC[sub.x]:H film at the p/i interface and the slightly n-type a-SiO[sub.x]:H film at the i/n interface can effectively improve the V [sub.oc], FF, and η of p-i-n solar cells.
Publisher
MDPI AG
Subject
