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Spin-split bands cause the indirect band gap of (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\): Experimental evidence from circular photogalvanic effect
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Spin-split bands cause the indirect band gap of (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\): Experimental evidence from circular photogalvanic effect
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Spin-split bands cause the indirect band gap of (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\): Experimental evidence from circular photogalvanic effect
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Paper
Spin-split bands cause the indirect band gap of (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\): Experimental evidence from circular photogalvanic effect
2017
Overview
Long carrier lifetimes and diffusion lengths form the basis for the successful application of the organic-inorganic perovskite (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\) in solar cells and lasers. The mechanism behind the long carrier lifetimes is still not completely understood. Spin-split bands and a resulting indirect band gap have been proposed by theory. Using near band-gap left-handed and right-handed circularly polarized light we induce photocurrents of opposite directions in a single-crystal (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\) device at low temperature (\\(4~\\mathrm{K}\\)). The phenomenom is known as the circular photogalvanic effect and gives direct evidence for phototransport in spin-split bands. Simultaneous photoluminecence measurements show that the onset of the photocurrent is below the optical band gap. The results prove that an indirect band gap exists in (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\) with broken inversion symmetry as a result of spin-splittings in the band structure. This information is essential for understanding the photophysical properties of organic-inorganic perovskites and finding lead-free alternatives. Furthermore, the optically driven spin currents in (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\) make it a candidate material for spintronics applications.
Publisher
Cornell University Library, arXiv.org
