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Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
by
Kanski, J
, Ghijsen, J
, Porowski, S
, Sadowski, J
, Perlin, P
, Mirabella, F
, Grzegory, I
, Kowalski, B J
, Kowalik, I A
, Leszczynski, M
, Lusakowska, E
, Iwanowski, R J
, Orlowski, B A
in
Argon
/ Argon ions
/ Chemical composition
/ Electronic structure
/ Electrons
/ Ion etching
/ Organic chemistry
/ Photoelectric emission
/ Photoelectrons
/ Valence band
/ X ray photoelectron spectroscopy
2004
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Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
by
Kanski, J
, Ghijsen, J
, Porowski, S
, Sadowski, J
, Perlin, P
, Mirabella, F
, Grzegory, I
, Kowalski, B J
, Kowalik, I A
, Leszczynski, M
, Lusakowska, E
, Iwanowski, R J
, Orlowski, B A
in
Argon
/ Argon ions
/ Chemical composition
/ Electronic structure
/ Electrons
/ Ion etching
/ Organic chemistry
/ Photoelectric emission
/ Photoelectrons
/ Valence band
/ X ray photoelectron spectroscopy
2004
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Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
by
Kanski, J
, Ghijsen, J
, Porowski, S
, Sadowski, J
, Perlin, P
, Mirabella, F
, Grzegory, I
, Kowalski, B J
, Kowalik, I A
, Leszczynski, M
, Lusakowska, E
, Iwanowski, R J
, Orlowski, B A
in
Argon
/ Argon ions
/ Chemical composition
/ Electronic structure
/ Electrons
/ Ion etching
/ Organic chemistry
/ Photoelectric emission
/ Photoelectrons
/ Valence band
/ X ray photoelectron spectroscopy
2004
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Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
Paper
Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
2004
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Overview
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface subjected to similar ion etching was proven by means of X-ray photoemission spectroscopy.
Publisher
Cornell University Library, arXiv.org
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