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Development of a High Rate Front-end ASIC for X-ray Spectroscopy and Diffraction Applications
by
Fried, Jack
, Kuczewski, John
, De Geronimo, Gianluigi
, Smith, Graham
, Quaranta, Orlando
, Emerson, Vernon
, Woods, Russell
, Giacomini, Gabriele
, Kuczewski, Anthony
, Miceli, Antonino
, Chen, Wei
, Pinelli, Don
, Siddons, Peter
, Baldwin, Jonathan
, Rumaiz, Abdul K
, Stanacevic, Milutin
, Mead, Joe
, Okasinski, John S
in
Application specific integrated circuits
/ Integrated circuits
/ Linearity
/ Spectral resolution
2019
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Development of a High Rate Front-end ASIC for X-ray Spectroscopy and Diffraction Applications
by
Fried, Jack
, Kuczewski, John
, De Geronimo, Gianluigi
, Smith, Graham
, Quaranta, Orlando
, Emerson, Vernon
, Woods, Russell
, Giacomini, Gabriele
, Kuczewski, Anthony
, Miceli, Antonino
, Chen, Wei
, Pinelli, Don
, Siddons, Peter
, Baldwin, Jonathan
, Rumaiz, Abdul K
, Stanacevic, Milutin
, Mead, Joe
, Okasinski, John S
in
Application specific integrated circuits
/ Integrated circuits
/ Linearity
/ Spectral resolution
2019
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Development of a High Rate Front-end ASIC for X-ray Spectroscopy and Diffraction Applications
by
Fried, Jack
, Kuczewski, John
, De Geronimo, Gianluigi
, Smith, Graham
, Quaranta, Orlando
, Emerson, Vernon
, Woods, Russell
, Giacomini, Gabriele
, Kuczewski, Anthony
, Miceli, Antonino
, Chen, Wei
, Pinelli, Don
, Siddons, Peter
, Baldwin, Jonathan
, Rumaiz, Abdul K
, Stanacevic, Milutin
, Mead, Joe
, Okasinski, John S
in
Application specific integrated circuits
/ Integrated circuits
/ Linearity
/ Spectral resolution
2019
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Development of a High Rate Front-end ASIC for X-ray Spectroscopy and Diffraction Applications
Paper
Development of a High Rate Front-end ASIC for X-ray Spectroscopy and Diffraction Applications
2019
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Overview
We developed a new front-end application specific integrated circuit (ASIC) for the upgrade of the Maia x-ray microprobe. The ASIC instruments 32 configurable front-end channels that perform either positive or negative charge amplification, pulse shaping, peak amplitude and time extraction along with buffered analog storage. At a gain of 3.6 V/fC, 1 \\(\\mu\\)s peaking time and a temperature of 248 K, an electronic resolution of 13- and 10 electrons rms was measured with and without a SDD sensor respectively. A spectral resolution of 170 eV FWHM at 5.9 keV was obtained with an \\(^{55}\\)Fe source. The channel linearity was better than \\(\\pm\\) 1 % with rate capabilities up to 40 kcps. The ASIC was fabricated in a commercial 250 nm process with a footprint of 6.3 mm x 3.9 mm and dissipates 167 mW of static power.
Publisher
Cornell University Library, arXiv.org
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