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Nuclear magnetic resonance of ion implanted \\(^8\\)Li in ZnO
Nuclear magnetic resonance of ion implanted \\(^8\\)Li in ZnO
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Nuclear magnetic resonance of ion implanted \\(^8\\)Li in ZnO
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Nuclear magnetic resonance of ion implanted \\(^8\\)Li in ZnO
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Nuclear magnetic resonance of ion implanted \\(^8\\)Li in ZnO
Nuclear magnetic resonance of ion implanted \\(^8\\)Li in ZnO
Paper

Nuclear magnetic resonance of ion implanted \\(^8\\)Li in ZnO

2021
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Overview
We report on the stability and magnetic state of ion implanted \\(^8\\)Li in single crystals of the semiconductor ZnO using \\(\\beta\\)-detected nuclear magnetic resonance. At ultradilute concentrations, the spectra reveal distinct Li sites from 7.6 to 400 K. Ionized shallow donor interstitial Li is stable across the entire temperature range, confirming its ability to self-compensate the acceptor character of its (Zn) substitutional counterpart. Above 300 K, spin-lattice relaxation indicates the onset of correlated local motion of interacting defects, and the spectra show a site change transition from disordered configurations to substitutional. Like the interstitial, the substitutional shows no resolved hyperfine splitting, indicating it is also fully ionized above 210 K. The electric field gradient at the interstitial \\(^8\\)Li exhibits substantial temperature dependence with a power law typical of non-cubic metals.