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Orbital memory from individual Fe atoms on black phosphorus
by
Kiraly, Brian
, Katsnelson, Mikhail I
, Khajetoorians, Alexander A
, Knol, Elze J
, Rudenko, Alexander N
in
Charge distribution
/ Cobalt
/ Density functional theory
/ Electron tunneling
/ Iron
/ Magnetic moments
/ Mathematical analysis
/ Phosphorus
/ Scanning tunneling microscopy
/ Switching
2022
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Orbital memory from individual Fe atoms on black phosphorus
by
Kiraly, Brian
, Katsnelson, Mikhail I
, Khajetoorians, Alexander A
, Knol, Elze J
, Rudenko, Alexander N
in
Charge distribution
/ Cobalt
/ Density functional theory
/ Electron tunneling
/ Iron
/ Magnetic moments
/ Mathematical analysis
/ Phosphorus
/ Scanning tunneling microscopy
/ Switching
2022
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Do you wish to request the book?
Orbital memory from individual Fe atoms on black phosphorus
by
Kiraly, Brian
, Katsnelson, Mikhail I
, Khajetoorians, Alexander A
, Knol, Elze J
, Rudenko, Alexander N
in
Charge distribution
/ Cobalt
/ Density functional theory
/ Electron tunneling
/ Iron
/ Magnetic moments
/ Mathematical analysis
/ Phosphorus
/ Scanning tunneling microscopy
/ Switching
2022
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Orbital memory from individual Fe atoms on black phosphorus
Paper
Orbital memory from individual Fe atoms on black phosphorus
2022
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Overview
Bistable valency in individual atoms presents a new approach toward single-atom memory, as well as a building block to create tunable and stochastic multi-well energy landscapes. Yet, this concept of orbital memory has thus far only been observed for cobalt atoms on the surface of black phosphorus, which are switched using tip-induced ionization. Here, we show that individual iron atoms on the surface of black phosphorus exhibit orbital memory using a combination of scanning tunneling microscopy and spectroscopy with ab initio calculations based on density functional theory. Unlike cobalt, the iron orbital memory can be switched in its non-ionized ground state. Based on calculations, we confirm that each iron valency has a distinct magnetic moment that is characterized by a distinguishable charge distribution due to the different orbital population. By studying the stochastic switching of the valency with varying tunneling conditions, we propose that the switching mechanism is based on a two-electron tunneling process.
Publisher
Cornell University Library, arXiv.org
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