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Discovery of Superconductivity in Nb\\(_4\\)SiSb\\(_2\\) with a V\\(_4\\)SiSb\\(_2\\)-Type Structure and Implications of Interstitial Doping on its Physical Properties
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Discovery of Superconductivity in Nb\\(_4\\)SiSb\\(_2\\) with a V\\(_4\\)SiSb\\(_2\\)-Type Structure and Implications of Interstitial Doping on its Physical Properties
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Discovery of Superconductivity in Nb\\(_4\\)SiSb\\(_2\\) with a V\\(_4\\)SiSb\\(_2\\)-Type Structure and Implications of Interstitial Doping on its Physical Properties
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Paper
Discovery of Superconductivity in Nb\\(_4\\)SiSb\\(_2\\) with a V\\(_4\\)SiSb\\(_2\\)-Type Structure and Implications of Interstitial Doping on its Physical Properties
2022
Overview
We report on the discovery, structural analysis, and the physical properties of Nb\\(_4\\)SiSb\\(_2\\) -- a hitherto unknown compound crystallizing in the V\\(_4\\)SiSb\\(_2\\)-type structure with the tetragonal space group \\(I4/mcm\\) and unit cell parameters \\(a\\) = 10.3638(2) \\(A\\) and \\(c\\) = 4.9151(2) \\(A\\). We find Nb\\(_4\\)SiSb\\(_2\\) to be a metal undergoing a transition to a superconducting state at a critical temperature of \\(T_ c \\) 1.6 K. The bulk nature of the superconductivity in this material is confirmed by the observation of a well defined discontinuity in specific heat with a normalized specific heat jump of \\( C(T_ c)/ T_ c = 1.33\\, mJ\\, mol^-1\\, K^-2\\). We find that for Nb\\(_4\\)SiSb\\(_2\\), the unoccupied sites on the \\(4b\\) Wyckoff position can be partially occupied with Cu, Pd, or Pt. Low-temperature resistivity measurements show transitions to superconductivity for all three compounds at \\(T_ c \\, 1.2\\, K\\) for Nb\\(_4\\)Cu\\(_0.2\\)SiSb\\(_2\\), and \\(T_ c \\, 0.8\\, K\\) for Nb\\(_4\\)Pd\\(_0.2\\)SiSb\\(_2\\) as well as for Nb\\(_4\\)Pt\\(_0.14\\)SiSb\\(_2\\). The addition of electron-donor atoms into these void positions, henceforth, lowers the superconducting transition temperature in comparison to the parent compound.
Publisher
Cornell University Library, arXiv.org
Subject
