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Two-dimensional submicron semiconductor device TCAD by hydrodynamic and numerical Boltzmann simulation
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Two-dimensional submicron semiconductor device TCAD by hydrodynamic and numerical Boltzmann simulation
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Dissertation
Two-dimensional submicron semiconductor device TCAD by hydrodynamic and numerical Boltzmann simulation
1996
Overview
This dissertation presents 2-D submicron semiconductor device simulation by both the Hydrodynamic (HD) and the Numerical Boltzmann models. First a new numerical formulation for solving the hydrodynamic model of semiconductor devices which is specially tailored for a block-Gummel iterative approach is presented. Instead of using standard variables$n,pT\\sb{e},T\\sb{p},$new state variables are introduced. When used in conjunction with the Gummel method, the new variables facilitate transformation of the HD equations into linear forms. To help resolve rapid variations in the state variables, a Scharfetter-Gummel type discretization has been developed. The discretization yields a discrete system with coefficient matrices which are well conditioned. The discrete equations are solved using a fixed-point algorithm and a block-Gummel iterative technique. The new approach is used to model a 0.35 $\\mu$ m two-dimensional LDD MOSFET. Second we present a new 2-D MOSFET simulation method achieved by directly solving the Boltzmann Transport Equation (BTE) for electrons, the Hole-Current Continuity Equation and the Poisson Equation self-consistently. The Spherical Harmonic expansion method is used for the solution of the Boltzmann equation. The solution directly gives the electron distribution function, electrostatic potential, and the hole concentration for the entire 2-D MOSFET. Average quantities such as electron concentration and electron temperature are obtained directly from the integration of the distribution function. The collision integral is formulated to arbitrarily high Spherical Harmonic order, and new collision terms are included that incorporate effects of surface scattering and electron-hole pair recombination/generation, I-V characteristics, which agree with experiment, are calculated directly from the distribution function for an LDD submicron MOSFET. Electron-hole pair generation due to impact ionization is also included by direct application of the collision integral. Excellent agreement is achieved between the calculated substrate current and experimental measurement. The calculations are efficient enough for day-to-day engineering design on workstation-type computers.
Publisher
ProQuest Dissertations & Theses
Subject
ISBN
0591281724, 9780591281729
