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Efficient passivation of III-As(P) photonic interfaces
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Efficient passivation of III-As(P) photonic interfaces
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Paper
Efficient passivation of III-As(P) photonic interfaces
2025
Overview
Surface effects can significantly impact the performance of nanophotonic and quantum photonic devices, especially as the device dimensions are reduced. In this work, we propose and investigate a novel approach to surface passivation to mitigate these challenges in photonic nanostructures with III-As(P) quantum wells defined by a dry etching process. The nanostructures are annealed under the phosphine (PH\\(_3\\)) ambient inside a metal-organic vapor phase epitaxy chamber to eliminate surface and subsurface defects induced during the dry etching and subsequent oxidation of the etched sidewalls. Moreover, encapsulation of the active material with a wider bandgap material allows for maintaining the band structure of the device, mitigating band bending effects. Our findings reveal an almost order of magnitude reduction in the surface recombination velocity from \\(2 10^3 \\, cm/s\\) for the PH\\(_3\\) annealing compared to \\(1.5 10^4 \\, cm/s\\) for the non-passivated structures and \\(5 10^3 \\, cm/s\\) for the standard method based on (NH\\(_4\\))\\(_2\\)S wet treatment followed by Al\\(_2\\)O\\(_3\\) encapsulation. A further reduction to \\(5 10^2 \\, cm/s\\) is achieved for the InP-regrown samples. Additionally, we develop a model accounting for the impact of surface charges in the analysis of time-resolved photoluminescence curves and demonstrate that the proposed passivation method effectively reduces the surface charge density on the sidewalls of the studied quantum well-based photonic nanostructures.
Publisher
Cornell University Library, arXiv.org
Subject
