Asset Details
Do you wish to reserve the book?
Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO 2 /Ti/CeO 2 Resistive Switching Devices by Changing Top Electrode Material
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO 2 /Ti/CeO 2 Resistive Switching Devices by Changing Top Electrode Material
Do you wish to request the book?
Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO 2 /Ti/CeO 2 Resistive Switching Devices by Changing Top Electrode Material
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO 2 /Ti/CeO 2 Resistive Switching Devices by Changing Top Electrode Material
2017
Overview
Resistance switching characteristics of CeO
/Ti/CeO
tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO
/Ti/CeO
/Pt reveal better resistive switching performance instead of Ti/CeO
/Ti/CeO
/Pt memory stacks. As compared to the Ti/CeO
interface, much better ability of TaN/CeO
interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~10
) and no significant data degradation during endurance test of >10
switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO
film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO
based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and V
/V
uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.
We currently cannot retrieve any items related to this title. Kindly check back at a later time.