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Boosting Electronic Properties of CsPbBr 3 Nanocrystals via Lithium-Ion Doping and Surface Passivation for Enhanced Electrical Conductivity and Efficient White Light-Emitting Diodes
by
Leydecker, Tim
, Moyez, Sk Abdul
, Haris, Hamood Ur Rehman
, Wan, Siyuan
, Moin, Muhammad
, Thumu, Udayabhaskararao
, Ge, Zhongsheng
, Piotrowski, Marek
, Wang, Zhiming
, Dong, Lizhuang
2025
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Boosting Electronic Properties of CsPbBr 3 Nanocrystals via Lithium-Ion Doping and Surface Passivation for Enhanced Electrical Conductivity and Efficient White Light-Emitting Diodes
by
Leydecker, Tim
, Moyez, Sk Abdul
, Haris, Hamood Ur Rehman
, Wan, Siyuan
, Moin, Muhammad
, Thumu, Udayabhaskararao
, Ge, Zhongsheng
, Piotrowski, Marek
, Wang, Zhiming
, Dong, Lizhuang
in
2025
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Boosting Electronic Properties of CsPbBr 3 Nanocrystals via Lithium-Ion Doping and Surface Passivation for Enhanced Electrical Conductivity and Efficient White Light-Emitting Diodes
by
Leydecker, Tim
, Moyez, Sk Abdul
, Haris, Hamood Ur Rehman
, Wan, Siyuan
, Moin, Muhammad
, Thumu, Udayabhaskararao
, Ge, Zhongsheng
, Piotrowski, Marek
, Wang, Zhiming
, Dong, Lizhuang
2025
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Boosting Electronic Properties of CsPbBr 3 Nanocrystals via Lithium-Ion Doping and Surface Passivation for Enhanced Electrical Conductivity and Efficient White Light-Emitting Diodes
Journal Article
Boosting Electronic Properties of CsPbBr 3 Nanocrystals via Lithium-Ion Doping and Surface Passivation for Enhanced Electrical Conductivity and Efficient White Light-Emitting Diodes
2025
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Overview
Lithium's interaction with CsPbBr
nanocrystals (NCs), can enhancing its intrinsic electrical conductivity (σ) for high-performance device applications. Herein, two distinctly different modes of Li⁺ interaction with CsPbBr
NCs: minor lattice insertion (0.07% relative to Cs) and predominant surface passivation is reported through Li
Pb
alloy formation. In contrast, Li⁺ exhibits significantly reduced interaction with Cs
PbBr
NCs, which could be due to the persence of lower amount of Pb
on the surface of these structures. The σ of CsPbBr
:xLi
NCs through bottom-contact devices exhibited a gradual increase from 2.1 × 10
to as high as 2.5 × 10
S m
, which is a 50-fold improvement compared to CsPbBr
NCs. The enhanced σ is attributed to the presence of Li
doping and surface passivation of CsPbBr
by the Li
Pb
ligated complexes. DFT calculations revealed electron movement from the valence and to conduction band and a reduced bandgap further supporting the inferences from experimental studies. The unique feature of the increased luminescence and σ of CsPbBr
:Li
NCs is explored for fabricating white light emitting diodes. The luminescence efficacy of the device is in the range of 88.5 to 112.5 lm W
which is higher compared to pure CsPbBr
NCs (96.5 lm W
), offering a pathway for advanced optoelectronic applications.
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