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The long-standing claim of dark matter detection by the DAMA experiment remains a crucial open question in astroparticle physics. A key step towards its independent verification is the development of NaI(Tl)-based detectors with improved sensitivity at low energies. The majority of NaI(Tl)-based experiments rely on conventional photomultiplier tubes (PMTs) as single photon detectors, which present technological limitations in terms of light collection, intrinsic radioactivity and high noise contribution at keV energies. ASTAROTH is an R&D project developing a NaI(Tl)-based detector where the scintillation light is read out by silicon photomultipliers (SiPMs) matrices. SiPMs exhibit high photon detection efficiency, negligible radioactivity, and, most importantly, a dark noise nearly two orders of magnitude lower than PMTs, when operated at cryogenic temperature. To this end, ASTAROTH features a custom-designed cryostat based on a bath of cryogenic fluid, able to safely operate the detector and the read-out electronics down to about 80 K. This work reports the first experimental characterization of an approximately 360 g NaI(Tl) detector read out by a large area (5 cm × 5 cm) SiPM matrix. The net photoelectron yield obtained with a preliminary configuration is approximately 4.5 photoelectrons/keV after crosstalk correction, which is rather promising in light of several planned developments. The signal-to-noise ratio and the energy threshold attainable with SiPMs is expected to improve the sensitivity for dark matter searches beyond the reach of current-generation PMT-based detectors. This result is the first proof of the viability of this technology and sets a milestone toward the design of future large-scale experiments.

Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics.

Since the 1980s, researchers have taken giant steps in understanding how to use quantum mechanics for solving real problems—for example, making a computer that works according to the laws of quantum mechanics. In recent decades, researchers have tried to develop a platform for quantum information and computation that can be integrated into digital and telecom technologies without the need of a cryogenic environment. The current status of research in the field of quantum integrated photonics will be reviewed. A review of the most common integrated photonic platforms will be given, together with the main achievements and results in the last decade.

Integrated photonics on Silicon-On-Insulator (SOI) substrates is a well developed research field that has already significantly impacted various fields, such as quantum computing, micro sensing devices, biosensing, and high-rate communications. Although quite complex circuits can be made with such technology, everything is based on a few ’building blocks’ which are then combined to form more complex circuits. This review article provides a detailed examination of the state of the art of integrated photonic building blocks focusing on passive elements, covering fundamental principles and design methodologies. Key components discussed include waveguides, fiber-to-chip couplers, edges and gratings, phase shifters, splitters and switches (including y-branch, MMI, and directional couplers), as well as subwavelength grating structures and ring resonators. Additionally, this review addresses challenges and future prospects in advancing integrated photonic circuits on SOI platforms, focusing on scalability, power efficiency, and fabrication issues. The objective of this review is to equip researchers and engineers in the field with a comprehensive understanding of the current landscape and future trajectories of integrated photonic components on SOI substrates with a 220 nm thick device layer of intrinsic silicon.

Single-photon detectors have gained significant attention recently, driven by advancements in quantum information technology. Applications such as quantum key distribution, quantum cryptography, and quantum computation demand the ability to detect individual quanta of light and distinguish between single-photon states and multi-photon states, particularly when operating within waveguide systems. Although single-photon detector fabrication has been established for some time, integrating detectors with waveguides using new materials with suitable structural and electronic properties, especially at telecommunication wavelengths, creates more compact source-line-detector systems. This review explores the state of the art of single-photon detector research and examines the potential breakthroughs offered by novel low-dimensional materials in this field.

Integrated photonic platforms have rapidly emerged as highly promising and extensively investigated systems for advancing classical and quantum information technologies, since their ability to seamlessly integrate photonic components within the telecommunication band with existing silicon-based industrial processes offers significant advantages. However, despite this integration facilitating the development of novel devices, fostering fast and reliable communication protocols and the manipulation of quantum information, traditional integrated silicon photonics faces inherent physical limitations that necessitate a challenging trade-off between device efficiency and spatial footprint. To address this issue, researchers are focusing on the integration of nanoscale materials into photonic platforms, offering a novel approach to enhance device performance while reducing spatial requirements. These developments are of paramount importance in both classical and quantum information technologies, potentially revolutionizing the industry. In this review, we explore the latest endeavors in hybrid photonic platforms leveraging the combination of integrated silicon photonic platforms and nanoscale materials, allowing for the unlocking of increased device efficiency and compact form factors. Finally, we provide insights into future developments and the evolving landscape of hybrid integrated photonic nanomaterial platforms.

A bstract This paper presents a measurement of the double-differential cross section for the Drell-Yan Z/γ ∗ → ℓ + ℓ − and photon-induced γγ → ℓ + ℓ − processes where ℓ is an electron or muon. The measurement is performed for invariant masses of the lepton pairs, m ℓℓ , between 116 GeV and 1500 GeV using a sample of 20 . 3 fb −1 of pp collisions data at centre-of-mass energy of s = 8 TeV collected by the ATLAS detector at the LHC in 2012. The data are presented double differentially in invariant mass and absolute dilepton rapidity as well as in invariant mass and absolute pseudorapidity separation of the lepton pair. The single-differential cross section as a function of m ℓℓ is also reported. The electron and muon channel measurements are combined and a total experimental precision of better than 1% is achieved at low m ℓℓ . A comparison to next-to-next-to-leading order perturbative QCD predictions using several recent parton distribution functions and including next-to-leading order electroweak effects indicates the potential of the data to constrain parton distribution functions. In particular, a large impact of the data on the photon PDF is demonstrated.

A bstract This article presents searches for the Zγ decay of the Higgs boson and for narrow high-mass resonances decaying to Z γ, exploiting Z boson decays to pairs of electrons or muons. The data analysis uses 36.1 fb −1 of pp collisions at s = 13 recorded by the ATLAS detector at the CERN Large Hadron Collider. The data are found to be consistent with the expected Standard Model background. The observed (expected — assuming Standard Model pp → H → Z γ production and decay) upper limit on the production cross section times the branching ratio for pp → H → Z γ is 6.6. (5.2) times the Standard Model prediction at the 95% confidence level for a Higgs boson mass of 125.09 GeV. In addition, upper limits are set on the production cross section times the branching ratio as a function of the mass of a narrow resonance between 250 GeV and 2.4 TeV, assuming spin-0 resonances produced via gluon-gluon fusion, and spin-2 resonances produced via gluon-gluon or quark-antiquark initial states. For high-mass spin-0 resonances, the observed (expected) limits vary between 88 fb (61 fb) and 2.8 fb (2.7 fb) for the mass range from 250 GeV to 2.4 TeV at the 95% confidence level.

Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of in vivo dosimetry requires thin devices with maximal transparency and flexibility. For this reason, a thin (<10 µm) a-Si:H device deposited on a thin polyimide sheet is a very valid option for this application. Furthermore, a-Si:H is a material that has an intrinsically high radiation hardness. In order to develop these devices, the HASPIDE (Hydrogenated Amorphous Silicon Pixel Detectors) collaboration has implemented two different device configurations: n-i-p type diodes and charge-selective contact devices.Charge-selective contact-based devices have been studied for solar cell applications and, recently, the above-mentioned collaboration has tested these devices for X-ray dose measurements. In this paper, the HASPIDE collaboration has studied the X-ray and proton response of charge-selective contact devices deposited on Polyimide. The linearity of the photocurrent response to X-ray versus dose-rate has been assessed at various bias voltages. The sensitivity to protons has also been studied at various bias voltages and the wide range linearity has been tested for fluxes in the range from 8.3 × 107 to 2.49 × 1010 p/(cm2 s).