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This Review discusses the recent experimental and theoretical findings on polycrystalline graphene and related materials. Graphene, a single atomic layer of graphitic carbon, has attracted intense attention because of its extraordinary properties that make it a suitable material for a wide range of technological applications. Large-area graphene films, which are necessary for industrial applications, are typically polycrystalline — that is, composed of single-crystalline grains of varying orientation joined by grain boundaries. Here, we present a review of the large body of research reported in the past few years on polycrystalline graphene. We discuss its growth and formation, the microscopic structure of grain boundaries and their relations to other types of topological defect such as dislocations. The Review further covers electronic transport, optical and mechanical properties pertaining to the characterizations of grain boundaries, and applications of polycrystalline graphene. We also discuss research, still in its infancy, performed on other two-dimensional materials such as transition metal dichalcogenides, and offer perspectives for future directions of research.

Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe 2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at the double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. Such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation. Novel physics of topological aspects are obscured due to lack of effective way to manipulate topological particles. Here, Xu et al . demonstrate independent control of Dirac fermions on top and bottom surfaces of BiSbTeSe 2 flakes by dual-gating, which suggests a way to manipulate exotic particles.

Electron spins in van der Waals materials are playing a crucial role in recent advances in condensed-matter physics and spintronics. However, nuclear spins in van der Waals materials remain an unexplored quantum resource. Here we report optical polarization and coherent control of nuclear spins in a van der Waals material at room temperature. We use negatively charged boron vacancy ( V B − ) spin defects in hexagonal boron nitride to polarize nearby nitrogen nuclear spins. We observe the Rabi frequency of nuclear spins at the excited-state level anti-crossing of V B − defects to be 350 times larger than that of an isolated nucleus, and demonstrate fast coherent control of nuclear spins. Further, we detect strong electron-mediated nuclear–nuclear spin coupling that is five orders of magnitude larger than the direct nuclear-spin dipolar coupling, enabling multi-qubit operations. Our work opens new avenues for the manipulation of nuclear spins in van der Waals materials for quantum information science and technology. Unlike electron spins, nuclear spins in van der Waals materials remain a largely untapped quantum resource. Here we report the fast coherent control of nuclear spins and strong electron-mediated nuclear–nuclear spin coupling in hexagonal boron nitride.

A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically protected gapless surface states. One of the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-defined half-integer quantum Hall effect (QHE) in a magnetic field, where the surface Hall conductivities become quantized in units of (1/2) e 2 / h ( e being the electron charge, h the Planck constant) concomitant with vanishing resistance. Here, we observe a well-developed QHE arising from TSS in an intrinsic TI of BiSbTeSe 2 . Our samples exhibit surface-dominated conduction even close to room temperature, whereas the bulk conduction is negligible. At low temperatures and high magnetic fields perpendicular to the top and bottom surfaces, we observe well-developed integer quantized Hall plateaux, where the two parallel surfaces each contribute a half-integer e 2 / h quantized Hall conductance, accompanied by vanishing longitudinal resistance. When the bottom surface is gated to match the top surface in carrier density, only odd integer QH plateaux are observed, representing a half-integer QHE of two degenerate Dirac gases. This system provides an excellent platform to pursue a plethora of exotic physics and novel device applications predicted for TIs, ranging from magnetic monopoles and Majorana particles to dissipationless electronics and fault-tolerant quantum computers. Experimentalists have observed the predicted half-integer quantum Hall effect using the topological insulator BiSbTeSe 2 , which exhibits topological surface states at room temperature, with each surface contributing a half quantum of Hall conductance.

The spin-helical Dirac fermion topological surface states in a topological insulator nanowire or nanoribbon promise novel topological devices and exotic physics such as Majorana fermions. Here, we report local and non-local transport measurements in Bi 2 Te 3 topological insulator nanoribbons that exhibit quasi-ballistic transport over ∼2 μm. The conductance versus axial magnetic flux Φ exhibits Aharonov–Bohm oscillations with maxima occurring alternately at half-integer or integer flux quanta ( Φ 0  =  h / e , where h is Planck's constant and e is the electron charge) depending periodically on the gate-tuned Fermi wavevector ( k F ) with period 2π/ C (where C is the nanoribbon circumference). The conductance versus gate voltage also exhibits k F -periodic oscillations, anti-correlated between Φ  = 0 and Φ 0 /2. These oscillations enable us to probe the Bi 2 Te 3 band structure, and are consistent with the circumferentially quantized topological surface states forming a series of one-dimensional subbands, which undergo periodic magnetic field-induced topological transitions with the disappearance/appearance of the gapless Dirac point with a one-dimensional spin helical mode. Conductance oscillations periodic in Fermi energy and in magnetic flux measured in topological insulator nanoribbons reveal characteristic topological transport with quantized topological surface state subbands.

Topological insulators (TIs) are an unusual phase of quantum matter with nontrivial spin-momentum-locked topological surface states (TSS). The electrical detection of spin-momentum-locking of TSS has been lacking till very recently. Many of the results are from samples with significant bulk conduction, such as Bi 2 Se 3 , where it can be challenging to separate the surface and bulk contribution to the spin signal. Here, we report spin potentiometric measurements in flakes exfoliated from bulk insulating Bi 2 Te 2 Se crystals, using two outside nonmagnetic contacts for driving a DC spin helical current and a middle ferromagnetic (FM)-Al 2 O 3 contact for detecting spin polarization. The voltage measured by the FM electrode exhibits a hysteretic step-like change when sweeping an in-plane magnetic field between opposite directions along the easy axis of the FM contact. Importantly, the direction of the voltage change can be reversed by reversing the direction of current and the amplitude of the change as measured by the difference in the detector voltage between opposite FM magnetization increases linearly with increasing current, consistent with the current-induced spin polarization of spin-momentum-locked TSS. Our work directly demonstrates the electrical injection and detection of spin polarization in TI and may enable utilization of TSS for applications in nanoelectronics and spintronics.

Ferroelectrics are essential in memory devices for multi-bit storage and high-density integration. Ferroelectricity mainly exists in compounds but rare in single-element materials due to their lack of spontaneous polarization in the latter. However, we report a room-temperature ferroelectricity in quasi-one-dimensional Te nanowires. Piezoelectric characteristics, ferroelectric loops and domain reversals are clearly observed. We attribute the ferroelectricity to the ion displacement created by the interlayer interaction between lone-pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, giving rise to a self-gated ferroelectric field-effect transistor. By utilizing ferroelectric Te nanowire as channel, the device exhibits high mobility (~220 cm 2 ·V −1 ·s −1 ), continuous-variable resistive states can be observed with long-term retention (>10 5 s), fast speed (<20 ns) and high-density storage (>1.92 TB/cm 2 ). Our work provides opportunities for single-element ferroelectrics and advances practical applications such as ultrahigh-density data storage and computing-in-memory devices. Authors find room-temperature ferroelectricity in single element Te nanowires, highlighting that reducing dimensions to 1D in low-dimensional piezoelectric materials with chain structures is an effective strategy to induce ferroelectricity absent in their 2D form.

Van der Waals (vdW) magnet heterostructures have emerged as new platforms to explore exotic magnetic orders and quantum phenomena. Here, we study heterostructures of layered antiferromagnets, CrI 3 and CrCl 3 , with perpendicular and in-plane magnetic anisotropy, respectively. Using magneto-optical Kerr effect microscopy, we demonstrate out-of-plane magnetic order in the CrCl 3 layer proximal to CrI 3 , with ferromagnetic interfacial coupling between the two. Such an interlayer exchange field leads to higher critical temperature than that of either CrI 3 or CrCl 3 alone. We further demonstrate significant electric-field control of the coercivity, attributed to the naturally broken structural inversion symmetry of the heterostructure allowing unprecedented direct coupling between electric field and interfacial magnetism. These findings illustrate the opportunity to explore exotic magnetic phases and engineer spintronic devices in vdW heterostructures. One particularly useful feature of van der Waals materials is the ability to combine layers of different materials into a single heterostructure, which can have superior properties than any of the constituent materials alone. Here, Cheng et al. combine two interlayer-antiferromagnetic chromium trihalides, CrI 3 and CrCl 3 in close proximity, and demonstrate ferromagnetic coupling between them.

Optical phonon engineering through nonlinear effects has been utilized in ultrafast control of material properties. However, nonlinear optical phonons typically exhibit rapid decay due to strong mode-mode couplings, limiting their effectiveness in temperature or frequency sensitive applications. Here we report the observation of long-lived nonlinear optical phonons through the spontaneous formation of phonon frequency combs in the van der Waals material CrXTe 3 (X=Ge, Si) using high-resolution Raman scattering. Unlike conventional optical phonons, the highest A g mode in CrGeTe 3 splits into equidistant, sharp peaks forming a frequency comb that persists for hundreds of oscillations and survives up to 200K. These modes correspond to localized oscillations of Ge 2 Te 6 clusters, isolated from Cr hexagons, behaving as independent quantum oscillators. Introducing a cubic nonlinear term to the harmonic oscillator model, we simulate the phonon time evolution and successfully replicate the observed comb structure. Similar frequency comb behavior is observed in CrSiTe 3 , demonstrating the generalizability of this phenomenon. Our findings demonstrate that Raman scattering effectively probes high-frequency nonlinear phonon modes, offering insight into the generation of long-lived, tunable phonon frequency combs with potential applications in ultrafast material control and phonon-based technologies. Nonlinear optical phonons often exhibit rapid decay. Here, the authors demonstrate long-lived nonlinear optical phonons through the spontaneous formation of phonon frequency combs in CrXTe 3 (X=Ge,Si).

Understanding the effects of spin-orbit coupling (SOC) and many-body interactions on spin transport is important in condensed matter physics and spintronics. This topic has been intensively studied for spin carriers such as electrons but barely explored for charge-neutral bosonic quasiparticles (including their condensates), which hold promises for coherent spin transport over macroscopic distances. Here, we explore the effects of synthetic SOC (induced by optical Raman coupling) and atomic interactions on the spin transport in an atomic Bose-Einstein condensate (BEC), where the spin-dipole mode (SDM, actuated by quenching the Raman coupling) of two interacting spin components constitutes an alternating spin current. We experimentally observe that SOC significantly enhances the SDM damping while reducing the thermalization (the reduction of the condensate fraction). We also observe generation of BEC collective excitations such as shape oscillations. Our theory reveals that the SOC-modified interference, immiscibility, and interaction between the spin components can play crucial roles in spin transport. Spin-orbit coupling is interesting for fundamental understanding of spin transport and quench dynamics. Here the authors demonstrate spin-current generation and its relaxation in spin-orbit-coupled Bose-Einstein condensates of Rb atoms in different spin states.