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Collective spin excitations in magnetically ordered crystals, called magnons or spin waves, can serve as carriers in novel spintronic devices with ultralow energy consumption. The generation of well-detectable spin flows requires long lifetimes of high-frequency magnons. In general, the lifetime of spin waves in a metal is substantially reduced due to a strong coupling of magnons to the Stoner continuum. This makes metals unattractive for use as components for magnonic devices. Here, we present the metallic antiferromagnet CeCo 2 P 2 , which exhibits long-living magnons even in the terahertz (THz) regime. For CeCo 2 P 2 , our first-principle calculations predict a suppression of low-energy spin-flip Stoner excitations, which is verified by resonant inelastic X-ray scattering measurements. By comparison to the isostructural compound LaCo 2 P 2 , we show how small structural changes can dramatically alter the electronic structure around the Fermi level leading to the classical picture of the strongly damped magnons intrinsic to metallic systems. Our results not only demonstrate that long-lived magnons in the THz regime can exist in bulk metallic systems, but they also open a path for an efficient search for metallic magnetic systems in which undamped THz magnons can be excited. Magnons (spin-waves) in magnetic materials offer the potential for fast and efficient information processing. To avoid excessive damping due to free electrons, one is typically limited to magnetic insulators as host materials. Here, Poelchen et al demonstrate long lived spin-waves, at terahertz frequencies in the metallic antiferromaget CeCo 2 P 2 , opening up the possibility of using metallic aniferromagnets for spinwave information processing.

See how they run Electrons move in solids at very high speed — traversing atomic layers and interfaces within tens to hundreds of attoseconds (an attosecond is a billionth of a billionth of a second). These astonishingly brief travel times will ultimately limit the speed of the electronics of the future. Physicists have now experimentally probed such electron dynamics in real time. The cover illustrates the first attosecond spectroscopic measurement in a solid, revealing a 110-attosecond difference in the travel time of two different types of electrons following photoexcitation in a tungsten crystal. The ability to time electrons moving in solids over merely a few interatomic distances makes it possible to probe the solid-state electronic processes occurring at the ultimate speed limit and thus helps to advance technologies such as computation, data storage and photovoltaics, which all rely on exquisite control of electron transport in ever smaller structures of solid matter. When exposing a tungsten crystal to intense light, the travel times of emitted electrons differ by 110 attoseconds, depending on whether they were originally tightly bound to one atom in the crystal or delocalized over many atoms. This ability to directly probe fundamental aspects of solid-state electron dynamics could aid the further development of modern technologies such as electronics, information processing and photovoltaics. Comprehensive knowledge of the dynamic behaviour of electrons in condensed-matter systems is pertinent to the development of many modern technologies, such as semiconductor and molecular electronics, optoelectronics, information processing and photovoltaics. Yet it remains challenging to probe electronic processes, many of which take place in the attosecond (1 as = 10 -18  s) regime. In contrast, atomic motion occurs on the femtosecond (1 fs = 10 -15  s) timescale and has been mapped in solids in real time 1 , 2 using femtosecond X-ray sources 3 . Here we extend the attosecond techniques 4 , 5 previously used to study isolated atoms in the gas phase to observe electron motion in condensed-matter systems and on surfaces in real time. We demonstrate our ability to obtain direct time-domain access to charge dynamics with attosecond resolution by probing photoelectron emission from single-crystal tungsten. Our data reveal a delay of approximately 100 attoseconds between the emission of photoelectrons that originate from localized core states of the metal, and those that are freed from delocalized conduction-band states. These results illustrate that attosecond metrology constitutes a powerful tool for exploring not only gas-phase systems, but also fundamental electronic processes occurring on the attosecond timescale in condensed-matter systems and on surfaces.

Dynamical processes are commonly investigated using laser pump–probe experiments, with a pump pulse exciting the system of interest and a second probe pulse tracking its temporal evolution as a function of the delay between the pulses 1 , 2 , 3 , 4 , 5 , 6 . Because the time resolution attainable in such experiments depends on the temporal definition of the laser pulses, pulse compression to 200 attoseconds (1 as = 10 -18  s) is a promising recent development. These ultrafast pulses have been fully characterized 7 , and used to directly measure light waves 8 and electronic relaxation in free atoms 2 , 3 , 4 . But attosecond pulses can only be realized in the extreme ultraviolet and X-ray regime; in contrast, the optical laser pulses typically used for experiments on complex systems last several femtoseconds (1 fs = 10 -15  s) 1 , 5 , 6 . Here we monitor the dynamics of ultrafast electron transfer—a process important in photo- and electrochemistry and used in solid-state solar cells, molecular electronics and single-electron devices—on attosecond timescales using core-hole spectroscopy. We push the method, which uses the lifetime of a core electron hole as an internal reference clock for following dynamic processes 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , into the attosecond regime by focusing on short-lived holes with initial and final states in the same electronic shell. This allows us to show that electron transfer from an adsorbed sulphur atom to a ruthenium surface proceeds in about 320 as.

Closed-shell atoms scattered from a metal surface exchange energy and momentum with surface phonons mostly via the interposed surface valence electrons, i.e., via the creation of virtual electron-hole pairs. The latter can then decay into surface phonons via electron-phonon interaction, as well as into acoustic surface plasmons (ASPs). While the first channel is the basis of the current inelastic atom scattering (IAS) surface-phonon spectroscopy, no attempt to observe ASPs with IAS has been made so far. In this study we provide evidence of ASP in Ni(111) with both Ne atom scattering and He atom scattering. While the former measurements confirm and extend so far unexplained data, the latter illustrate the coupling of ASP with phonons inside the surface-projected phonon continuum, leading to a substantial reduction of the ASP velocity and possibly to avoided crossing with the optical surface phonon branches. The analysis is substantiated by a self-consistent calculation of the surface response function to atom collisions and of the first-principle surface-phonon dynamics of Ni(111). It is shown that in Ni(111) ASP originate from the majority-spin Shockley surface state and are therefore collective oscillation of surface electrons with the same spin, i.e. it represents a new kind of collective quasiparticle: a Spin Acoustic Surface Plasmon (SASP).

A long-standing discrepancy between experimental and theoretical values for the lifetimes of holes in the surface-state electron bands on noble metal surfaces is resolved; previous determinations of both are found to have been in error. The ability of the scanning tunneling microscope to verify surface quality before taking spectroscopic measurements is used to remove the effects of defect scattering on experimental lifetimes, found to have been a significant contribution to prior determinations. A theoretical treatment of inelastic electron-electron scattering is developed that explicitly includes intraband transitions within the surface state band. In our model, two-dimensional decay channels dominate the electron-electron interactions that contribute to the hole decay and are screened by the electron states of the underlying three-dimensional electron system.

The Ge 2 Sb 2 Te 5 is a phase-change material widely used in optical memory devices and is a leading candidate for next generation non-volatile random access memory devices which are key elements of various electronics and portable systems. Despite the compound is under intense investigation its electronic structure is currently not fully understood. The present work sheds new light on the electronic structure of the Ge 2 Sb 2 Te 5 crystalline phases. We demonstrate by predicting from first-principles calculations that stable crystal structures of Ge 2 Sb 2 Te 5 possess different topological quantum phases: a topological insulator phase is realized in low-temperature structure and Weyl semimetal phase is a characteristic of the high-temperature structure. Since the structural phase transitions are caused by the temperature the switching between different topologically non-trivial phases can be driven by variation of the temperature. The obtained results reveal the rich physics of the Ge 2 Sb 2 Te 5 compound and open previously unexplored possibility for spintronics applications of this material, substantially expanding its application potential.

The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a break- through in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should possess a sufficiently large band gap in a stable topological phase. Here, we theoretically show that quantum spin Hall insulators can be realized in ultra-thin films constructed from a trivial band insulator with strong spin-orbit coupling. The thinnest film with an inverted gap large enough for practical applications is a centrosymmetric sextuple layer built out of two inversely stacked non-centrosymmetric BiTeI trilayers. This nontrivial sextuple layer turns out to be the structure element of an artificially designed strong three-dimensional topological insulator Bi 2 Te 2 I 2 . We reveal general principles of how a topological insulator can be composed from the structure elements of the BiTe X family ( X  = I, Br, Cl), which opens new perspectives towards engineering of topological phases.

Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v 1 , v 2 , v 3 ℤ 2 index should host spin-locked topological surface states on the surfaces that are not parallel to the crystal plane with Miller indices ( v 1   v 2   v 3 ). On the other hand, mirror symmetry can protect an even number of topological states on the surfaces that are perpendicular to a mirror plane. Various symmetries in a bulk material with a band inversion can independently preordain distinct crystal planes for realization of topological states. Here we demonstrate the first instance of coexistence of both phenomena in the weak 3D TI Bi 2 TeI which ( v 1   v 2   v 3 ) surface hosts a gapless spin-split surface state protected by the crystal mirror-symmetry. The observed topological state has an even number of crossing points in the directions of the 2D Brillouin zone due to a non-TRIM bulk-band inversion. Our findings shed light on hitherto uncharted features of the electronic structure of weak topological insulators and open up new vistas for applications of these materials in spintronics.

Femtosecond and subfemtosecond time scales typically rule electron dynamics at metal surfaces. Recent advance in experimental techniques permits now remarkable precision in the description of these processes. In particular, shorter time scales, smaller system sizes, and spin-dependent effects are current targets of interest. In this article, we use state-of-the-art theoretical methods to analyze these refined features of electron dynamics. We show that the screening of localized charges at metal surfaces is created locally in the attosecond time scale, while collective excitations transfer the perturbation to larger distances in longer time scales. We predict that the elastic width of the resonance in excited alkali adsorbates on ferromagnetic surfaces can depend on spin orientation in a counterintuitive way. Finally, we quantitatively evaluate the electron—electron and electron—phonon contributions to the electronic excited states widths in ultrathin metal layers. We conclude that confinement and spin effects are key factors in the behavior of electron dynamics at metal surfaces.

The presence of giant diamagnetism in Au nanorods, NRs, is shown to be a possible consequence of field induced currents in the surface electrons. The distance, Δ, between quantum surface energy levels has been calculated as a function of the NRs radius. Note that those electrons occupying states for which Δ > k B T are steadily orbiting with constant orbital moment. The diamagnetic response induced when a field is turned on remains constant during the time the field is acting. As the NRs radius increases, Δ decreases and accordingly the electron fraction available to generate constant currents decreases, consequently the surface diamagnetic susceptibility decreases towards its bulk value. The surface electronic motion induced by the axial applied field on electrons confined into a cylindrical surface accounts with extremely good quantitative agreement for the giant diamagnetism recently measured and reported.