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Quantum spin Hall insulators in centrosymmetric thin films composed from topologically trivial BiTeI trilayers
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Quantum spin Hall insulators in centrosymmetric thin films composed from topologically trivial BiTeI trilayers
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Journal Article
Quantum spin Hall insulators in centrosymmetric thin films composed from topologically trivial BiTeI trilayers
2017
Overview
The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a break- through in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should possess a sufficiently large band gap in a stable topological phase. Here, we theoretically show that quantum spin Hall insulators can be realized in ultra-thin films constructed from a trivial band insulator with strong spin-orbit coupling. The thinnest film with an inverted gap large enough for practical applications is a centrosymmetric sextuple layer built out of two inversely stacked non-centrosymmetric BiTeI trilayers. This nontrivial sextuple layer turns out to be the structure element of an artificially designed strong three-dimensional topological insulator Bi
2
Te
2
I
2
. We reveal general principles of how a topological insulator can be composed from the structure elements of the BiTe
X
family (
X
= I, Br, Cl), which opens new perspectives towards engineering of topological phases.
Publisher
Nature Publishing Group UK,Nature Publishing Group
