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A study examines the cross-sectional relationship in returns across sectors of the US fixed-income market. Salomon Brothers BIG Index provides a comprehensive, trader-priced data base of monthly returns. Portfolios are constructed such that the risk characteristics of each portfolio remain relatively constant through time. Types of fixed-income securities that have offered superior returns for a particular level of risk over an 8-year period are identified. Optimal portfolios based on these historical returns are formed in a mean-variance framework. The excess returns of the mean-variance strategies are then tested out-of-sample, and practical considerations are addressed.

MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition of manganese and arsenic layers. It was shown that spontaneous formation of MnAs dots with the surface density of 1\\(\\cdot 10^{11}\\) cm\\(^{-2}\\) and \\(2.5\\cdot 10^{11}\\) cm\\(^{-2}\\), respectively (as observed by AFM), occurred for the layer thickness higher than 5 ML. Electronic structure of the MnAs/GaN systems was studied by resonant photoemission spectroscopy. That led to determination of the Mn 3d - related contribution to the total density of states (DOS) distribution of MnAs. It has been proven that the electronic structures of the MnAs dots grown by the two procedures differ markedly. One corresponds to metallic, ferromagnetic NiAs-type MnAs, the other is similar to that reported for half-metallic zinc-blende MnAs. Both system behave superparamagnetically (as revealed by magnetization measurements), but with both the blocking temperatures and the intra-dot Curie temperatures substantially different. The intra-dot Curie temperature is about 260 K for the former system while markedly higher than room temperature for the latter one. Relations between growth process, electronic structure and other properties of the studied systems are discussed. Possible mechanisms of half-metallic MnAs formation on GaN are considered.

Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.

The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface subjected to similar ion etching was proven by means of X-ray photoemission spectroscopy.

Topological nodal-line semimetals represent a unique class of materials with intriguing electronic structures and rich of symmetries, hosting electronic states with nontrivial topological properties. Among these, ZrAs\\(_2\\) stands out, characterized by its nodal lines in a momentum space, governed by nonsymmorphic symmetries. This study integrates angle-resolved photoemission spectroscopy (ARPES) with density functional theory (DFT) calculations to explore the electronic states of ZrAs\\(_2\\). Our study provides experimental evidence of nonsymmorphic symmetry-protected band crossing and nodal lines in ZrAs\\(_2\\). In ARPES scans, we observed a distinctive surface and bulk states at different photon energies associated with nodal lines. Our results, supported by calculations based on DFT, unveil such impervious band crossing anchored at specific points in the Brillouin zone, with particular emphasis on the S point. Surface bands and bulk states near the crossing are elucidated through slab calculations, corroborating experimental findings. These findings enhance our understanding of the electronic structure of ZrAs\\(_2\\).

Mathematical morphology is a powerful methodology for the processing and analysis of geometric structure in signals and images. This book contains the proceedings of the 5th International Symposium on Mathematical Morphology and its Applications to Image and Signal Processing, held June 26-28, 2000, at Xerox PARC, Palo Alto, California. It provides a broad sampling of theoretical and practical developments of mathematical morphology and its applications to image and signal processing. Areas covered include: decomposition of structuring functions and morphological operators, morphological discretization, filtering, connectivity and connected operators, morphological shape analysis and interpolation, texture analysis, morphological segmentation, morphological multiresolution techniques and scale-spaces, and morphological algorithms and applications.

We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the (\\(\\overline{2}\\) 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [\\(\\overline{2}\\) 0 1] direction. The results indicate the elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved (\\(\\overline{2}\\) 0 1) surface and it was found that bulk states pockets at the constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-doping of the samples. This shifts the Fermi level closer to the Dirac point, allowing to investigate the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.

The possibility of inducing superconductivity in type-I Weyl semimetal through coupling its surface to a superconductor was investigated. A single crystal of NbP, grown by chemical vapor transport method, was carefully characterized by XRD, EDX, SEM, ARPES techniques and by electron transport measurements. The mobility spectrum of the carriers was determined. For the studies of interface transmission, the (001) surface of the crystal was covered by several hundred nm thick metallic layers of either Pb, or Nb, or In. DC current-voltage characteristics and AC differential conductance through the interfaces as a function of the DC bias were investigated. When the metals become superconducting, all three types of junctions show conductance increase, pointing out the Andreev reflection as a prevalent contribution to the subgap conductance. In the case of Pb-NbP and Nb-NbP junctions, the effect is satisfactorily described by modified Blonder-Tinkham-Klapwijk model. The absolute value of the conductance is much smaller than that for the bulk crystal, indicating that the transmission occurs through only a small part of the contact area. An opposite situation occurs in In-NbP junction, where the conductance at the peak reaches the bulk value indicating that almost whole contact area is transmitting and, additionally, a superconducting proximity phase is formed in the material. We interpret this as a result of indium diffusion into NbP, where the metal atoms penetrate the surface barrier and form very transparent superconductor-Weyl semimetal contact inside. However, further diffusion occurring already at room temperature leads to degradation of the effect, so it is observed only in the pristine structures. Despite of this, our observation directly demonstrates possibility of inducing superconductivity in a type-I Weyl semimetal.