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A major bottleneck delaying the further commercialization of thin-film solar cells based on hybrid organohalide lead perovskites is interface loss in state-of-the-art devices. We present a generic interface architecture that combines solution-processed, reliable, and cost-efficient hole-transporting materials without compromising efficiency, stability, or scalability of perovskite solar cells. Tantalum-doped tungsten oxide (Ta-WOₓ)/conjugated polymer multilayers offer a surprisingly small interface barrier and form quasi-ohmic contacts universally with various scalable conjugated polymers. In a simple device with regular planar architecture and a self-assembled monolayer, Ta-WOₓ–doped interface–based perovskite solar cells achieve maximum efficiencies of 21.2% and offer more than 1000 hours of light stability. By eliminating additional ionic dopants, these findings open up the entire class of organics as scalable hole-transporting materials for perovskite solar cells.

Lead halide perovskite semiconductors are in general known to have an inherently high X-ray absorption cross-section and a significantly higher carrier mobility than any other low-temperature solution-processed semiconductor. So far, the processing of several-hundred-micrometres-thick high-quality crystalline perovskite films over a large area has been unresolved for efficient X-ray detection. In this Article, we present a mechanical sintering process to fabricate polycrystalline methyl ammonium lead triiodide perovskite (MAPbI 3 ) wafers with millimetre thickness and well-defined crystallinity. Benchmarking of the MAPbI 3 wafers against state-of-the-art CdTe detectors reveals competitive conversion efficiencies of 2,527 µC Gy air −1  cm −2 under 70 kV p X-ray exposure. The high ambipolar mobility–lifetime product of 2 × 10 −4  cm 2  V −1 is suggested to be responsible for this exceptionally high sensitivity. Our findings inform a new generation of highly efficient and low-cost X-ray detectors based on perovskite wafers. Methyl ammonium lead triiodide perovskite wafers for application in direct conversion X-ray detectors are fabricated by a room-temperature sintering process. A conversion efficiency of 2,527 mC Gy air cm –2 under 70 kVp X-ray exposure is obtained.

Lead halide perovskites are successfully used in thin-film solar cells, with efficiencies on the laboratory scale exceeding 22%. The electronic structure underlying their exceptional phototransport properties is complex because of the organic–inorganic character of the materials, their mechanical softness, and the strong spin–orbit coupling induced by the constituting heavy elements. Calculations predict that a dynamical Rashba effect could enhance the lifetimes and diffusion lengths of photocarriers in perovskite solar cells. The dynamical Rashba effect is characterized by spin splittings in the band structure at elevated temperatures, induced by local structural disorder. The mechanism should be general to structurally flexible materials composed of heavy elements, making those potentially attractive for both optoelectronics and spintronics. Lead halide perovskites are used in thin-film solar cells, which owe their high efficiency to the long lifetimes of photocarriers. Various calculations find that a dynamical Rashba effect could significantly contribute to these long lifetimes. This effect is predicted to cause a spin splitting of the electronic bands of inversion-symmetric crystalline materials at finite temperatures, resulting in a slightly indirect band gap. Direct experimental evidence of the existence or the strength of the spin splitting is lacking. Here, we resonantly excite photocurrents in single crystalline ( C H 3 N H 3 ) P b I 3 with circularly polarized light to clarify the existence of spin splittings in the band structure. We observe a circular photogalvanic effect, i.e., the photocurrent depends on the light helicity, in both orthorhombic and tetragonal ( C H 3 N H 3 ) P b I 3 . At room temperature, the effect peaks for excitation photon energies Δ E = 110 meV below the direct optical band gap. Temperature-dependent measurements reveal a sign change of the effect at the orthorhombic–tetragonal phase transition, indicating different microscopic origins in the two phases. Within the tetragonal phase, both Δ E and the amplitude of the circular photogalvanic effect increase with temperature. Our findings support a dynamical Rashba effect in this phase, i.e., a spin splitting caused by thermally induced structural fluctuations which break inversion symmetry.

Lead halide perovskites are used in thin-film solar cells, which owe their high efficiency to the long lifetimes of photocarriers. Various calculations find that a dynamical Rashba effect could significantly contribute to these long lifetimes. This effect is predicted to cause a spin splitting of the electronic bands of inversion-symmetric crystalline materials at finite temperatures, resulting in a slightly indirect band gap. Direct experimental evidence of the existence or the strength of the spin splitting is lacking. Here, we resonantly excite photocurrents in single crystalline (CH₃NH₃)PbI₃ with circularly polarized light to clarify the existence of spin splittings in the band structure. We observe a circular photogalvanic effect, i.e., the photocurrent depends on the light helicity, in both orthorhombic and tetragonal (CH₃NH₃)PbI₃. At room temperature, the effect peaks for excitation photon energies ΔE = 110 meV below the direct optical band gap. Temperature-dependent measurements reveal a sign change of the effect at the orthorhombic–tetragonal phase transition, indicating different microscopic origins in the two phases. Within the tetragonal phase, both ΔE and the amplitude of the circular photogalvanic effect increase with temperature. Our findings support a dynamical Rashba effect in this phase, i.e., a spin splitting caused by thermally induced structural fluctuations which break inversion symmetry.

Lead halide perovskites are used in thin-film solar cells, which owe their high efficiency to the long lifetimes of photocarriers. Various calculations find that a dynamical Rashba effect could significantly contribute to these long lifetimes. This effect is predicted to cause a spin splitting of the electronic bands of inversion-symmetric crystalline materials at finite temperatures, resulting in a slightly indirect band gap. Direct experimental evidence of the existence or the strength of the spin splitting is lacking. Here, we resonantly excite photocurrents in single crystalline (CH3NH3)PbI3 with circularly polarized light to clarify the existence of spin splittings in the band structure. We observe a circular photogalvanic effect, i.e., the photocurrent depends on the light helicity, in both orthorhombic and tetragonal (CH3NH3)PbI3. At room temperature, the effect peaks for excitation photon energies ΔE=110 meV below the direct optical band gap. Temperature-dependent measurements reveal a sign change of the effect at the orthorhombic–tetragonal phase transition, indicating different microscopic origins in the two phases. Within the tetragonal phase, both ΔE and the amplitude of the circular photogalvanic effect increase with temperature. Our findings support a dynamical Rashba effect in this phase, i.e., a spin splitting caused by thermally induced structural fluctuations which break inversion symmetry.

As they combine decent mobilities with extremely long carrier lifetimes, organic-inorganic perovskites have opened a whole new field in opto\\-electronics. Measurements of their underlying electronic structure, however, are still lacking. Using angle-resolved photoelectron spectroscopy, we measure the valence band dispersion of single-crystal CH\\(_3\\)NH\\(_3\\)PbBr\\(_3\\). The dispersion of the highest energy band is extracted applying a modified leading edge method, which accounts for the particular density of states of organic-inorganic perovskites. The surface Brillouin zone is consistent with bulk-terminated surfaces both in the low-temperature orthorhombic and the high-temperature cubic phase. In the low-temperature phase, we find a ring-shaped valence band maximum with a radius of 0.043 Å\\(^{-1}\\), centered around a 0.16 eV deep local minimum in the dispersion of the valence band at the high-symmetry point. Intense circular dichroism is observed. This dispersion is the result of strong spin-orbit coupling. Spin-orbit coupling is also present in the room-temperature phase. The coupling strength is one of the largest reported so far.

We measure temperature-dependent one-photon and two-photon induced photoluminescence from (CH3NH3)PbBr3 single crystals cleaved in ultrahigh vacuum. An approach is presented to extract absorption spectra from a comparison of both measurements. Cleaved crystals exhibit broad photoluminescence spectra. We identify the direct optical band gap of 2.31 eV. Below 200 K the band gap increases with temperature, and it decreases at elevated temperature, as described by the Bose-Einstein model. An excitonic transition is found 22 meV below the band gap at temperatures <200 K. Defect emission occurs at photon energies <2.16 eV. In addition, we observe a transition at 2.25 eV (2.22 eV) in the orthorhombic (tetragonal and cubic) phase. Below 200 K, the associated exciton binding energy is also 22 meV, and the transition redshifts at higher temperature. The binding energy of the exciton related to the direct band gap, in contrast, decreases in the cubic phase. High-energy emission from free carriers is observed with higher intensity than reported in earlier studies. It disappears after exposing the crystals to air.

Long carrier lifetimes and diffusion lengths form the basis for the successful application of the organic-inorganic perovskite (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\) in solar cells and lasers. The mechanism behind the long carrier lifetimes is still not completely understood. Spin-split bands and a resulting indirect band gap have been proposed by theory. Using near band-gap left-handed and right-handed circularly polarized light we induce photocurrents of opposite directions in a single-crystal (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\) device at low temperature (\\(4~\\mathrm{K}\\)). The phenomenom is known as the circular photogalvanic effect and gives direct evidence for phototransport in spin-split bands. Simultaneous photoluminecence measurements show that the onset of the photocurrent is below the optical band gap. The results prove that an indirect band gap exists in (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\) with broken inversion symmetry as a result of spin-splittings in the band structure. This information is essential for understanding the photophysical properties of organic-inorganic perovskites and finding lead-free alternatives. Furthermore, the optically driven spin currents in (CH\\(_3\\)NH\\(_3\\))PbI\\(_3\\) make it a candidate material for spintronics applications.