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Radioresistance is a principal culprit for the failure of radiotherapy in hepatocellular carcinoma (HCC). Insights on the regulation genes of radioresistance and underlying mechanisms in HCC are awaiting for profound investigation. In this study, the suppressor of cytokine signaling 2 (SOCS2) were screened out by RNA-seq and bioinformatics analyses as a potential prognosis predictor of HCC radiotherapy and then were determined to promote radiosensitivity in HCC both in vivo or in vitro. Meanwhile, the measurements of ferroptosis negative regulatory proteins of solute carrier family 7 member 11 (SLC7A11) and glutathione peroxidase 4 (GPX4), intracellular lipid peroxidation and Fe2+ concentration suggested that a high level of ferroptosis contributed to the radiosensitization of HCC. Moreover, SOCS2 and SLC7A11 were expressed oppositely in HCC clinical tissues and tumour xenografts with different radiosensitivities. Mechanistically, the N-terminal domain of SLC7A11 was specifically recognized by the SH2-structural domain of SOCS2. While the L162 and C166 of SOCS2-BOX region could bind elongin B/C compound to co-form a SOCS2/elongin B/C complex to recruit ubiquitin molecules. Herein, SOCS2 served as a bridge to transfer the attached ubiquitin to SLC7A11 and promoted K48-linked polyubiquitination degradation of SLC7A11, which ultimately led to the onset of ferroptosis and radiosensitization of HCC. In conclusion, it was demonstrated for the first time that high-expressed SOCS2 was one of the biomarkers predicting radiosensitivity of HCC by advancing the ubiquitination degradation of SLC7A11 and promoting ferroptosis, which indicates that targeting SOCS2 may enhance the efficiency of HCC radiotherapy and improve the prognosis of patients.

In this paper, a dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) based on biosensor is proposed for the detection of biomolecules. DM-DSTGTFET adopts double source and trench gate to enhance the on-state current and to generate bidirectional current. In the proposed structure, two cavities are etched over 1 nm gate oxide for biomolecules filling. A 2D simulation in the Technology Computer-Aided Design (TCAD) is adopted for the analysis of sensitivity study. The results show that under low supply voltage, the current sensitivity of the DM-DSTGTFET is as high as 1.38 × 105, and the threshold voltage sensitivity can reach 1.2 V. Therefore, the DM-DSTGTFET biosensor has good application prospects due to its low power consumption and high sensitivity.

Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced under gate electrode to electrically sense the characteristics of biomolecules, have been studied widely in recent years. In this paper, a new type of heterostructure junctionless tunnel FET biosensor with an embedded nanogap is proposed, in which the control gate consists of two parts, namely the tunnel gate and auxiliary gate, with different work functions; and the detection sensitivity of different biomolecules can be controlled and adjusted by the two gates. Further, a polar gate is introduced above the source region, and a P+ source is formed by the charge plasma concept by selecting appropriate work functions for the polar gate. The variation of sensitivity with different control gate and polar gate work functions is explored. Neutral and charged biomolecules are considered to simulate device-level gate effects, and the influence of different dielectric constants on sensitivity is also researched. The simulation results show that the switch ratio of the proposed biosensor can reach 109, the maximum current sensitivity is 6.91 × 102, and the maximum sensitivity of the average subthreshold swing (SS) is 0.62.

The Arabidopsis thaliana RING-type E3 ligase KEEP ON GOING (KEG) is a negative regulator of abscisic acid (ABA) signaling. Seedlings homozygous for T-DNA insertions in KEG accumulate high levels of the ABA-responsive transcription factor ABSCISIC ACID-INSENSITIVE5 (ABI5). Here, we demonstrate that KEG E3 ligase activity is required for the regulation of ABI5 abundance. KEG ubiquitinates ABI5 in vitro, and a functional KEG RING domain is required to restore the levels of ABI5 in keg-1 to that of the wild type. Overexpression of KEG leads to ABA insensitivity, which correlates with KEG protein levels. In the presence of ABA, ABI5 levels increase drastically via a decrease in ubiquitin-meditated proteasomal degradation. Our results indicate that ABA promotes ABI5 accumulation by inducing the ubiquitination and proteasomal degradation of KEG. A functional RING domain is required for the ABA-induced degradation of KEG, suggesting that the loss is due to self-ubiquitination. Mutations within KEG's kinase domain or treatments with kinase inhibitors prohibit the ABA-induced ubiquitination and degradation of KEG, indicating that phosphorylation, possibly self-phosphorylation, is involved in the ABA regulation of KEG protein levels. We discuss a model for how ABA may negatively regulate KEG protein abundance, leading to accumulation of ABI5 and ABA-dependent cellular responses.

Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO 2 , have been favored by lots of researchers because of its simple structure, high integration, fast operation speed, low power consumption, and high compatibility with advanced (complementary metal oxide silicon) CMOS technologies. In this paper, a 20-level stable resistance states Al-doped HfO 2 -based memristor is presented. Its cycles endurance, data retention time, and resistance ratio are larger than 10 3 , > 10 4 s, and > 10, respectively.

Materials with high electron transfer performance remain a key focus in photocatalytic research, as they can effectively promote the separation of photogenerated carriers and enhance the utilization efficiency of photogenerated electrons. To enhance the effective utilization of photogenerated electrons, the MSIG material was prepared by incorporating the iodine clusters and magnetic Fe3O4 into the as-synthesized crumpled graphene oxide (CGO) to construct Möbius-like electronic transmission pathways. The introduction of magnetic groups optimized the spin orientation of electrons, facilitating directional electron transport and thereby enhancing the photocatalytic efficiency of the material. Experimental results reveal that, in visible light-driven hydrogen production reactions, the eosin Y (EY)-sensitized Pt-Fe3O4-MSIG catalyst exhibits outstanding catalytic performance, with a hydrogen production rate of 1.48 mL/h, which is 15 times higher than that of the Pt-Fe3O4 catalyst. Photoelectrochemical analyses show a significant increase in the catalyst’s fluorescence lifetime, attributed to the Möbius strip-like electron transport channels within the material. Theoretical calculations further support this by demonstrating that the bandgap widening of the CGO reduces the recombination probability of photogenerated carriers, thereby improving their average lifetime. This study offers a novel approach for the design of visible-light-driven photocatalytic materials.

In this paper, the single-event burnout (SEB) and reinforcement structure of 1200 V SiC MOSFET (SG-SBD-MOSFET) with split gate and Schottky barrier diode (SBD) embedded were studied. The device structure was established using Sentaurus TCAD, and the transient current changes of single-event effect (SEE), SEB threshold voltage, as well as the regularity of electric field peak distribution transfer were studied when heavy ions were incident from different regions of the device. Based on SEE analysis of the new structural device, two reinforcement structure designs for SEB resistance were studied, namely the expansion of the P+ body contact area and the design of a multi-layer N-type interval buffer layer. Firstly, two reinforcement schemes for SEB were analyzed separately, and then comprehensive design and analysis were carried out. The results showed that the SEB threshold voltage of heavy ions incident from the N+ source region was increased by 16% when using the P+ body contact area extension alone; when the device is reinforced with a multi-layer N-type interval buffer layer alone, the SEB threshold voltage increases by 29%; the comprehensive use of the P+ body contact area expansion and a multi-layer N-type interval buffer layer reinforcement increased the SEB threshold voltage by 33%. Overall, the breakdown voltage of the reinforced device decreased from 1632.935 V to 1403.135 V, which can be seen as reducing the remaining redundant voltage to 17%. The device’s performance was not significantly affected.

Electro-optical modulators which work at the near-infrared range are significant for a variety of applications such as communication and sensing. However, currently available approaches result in rather bulky devices which suffer from low integration and can hardly operate at low power consumption levels. Graphene, an emerging advanced material, has been widely utilized due to its tunability by gating which allows one to realize active optical devices. Plasmonic waveguides, one of the most promising candidates for subwavelength optical confinement, provide a way to manipulate light on scales much smaller than the wavelength. In this paper, we combine the advantages of graphene and plasmonic waveguides and propose a tunable graphene-based hybrid plasmonic modulator (GHPM). Considering several parameters of the GHPM, the modulation depth can reach approximately 0.3 dB·μm −1 at low gating voltages. Moreover, we combine GHPM with metal-insulator-metal (MIM) structure to propose another symmetrical GHPM with a modulation depth of 0.6 dB·μm −1 . Our modulators which utilize the light-matter interaction tuned by electro-doped graphene are of great potential for many applications in nanophotonics.

A kind of finite difference Hermite WENO (HWENO) method is presented in this paper to deal with convection-dominated convection-diffusion equations in uniform grids. The benefit of the HWENO method is its compactness, allowing great accuracy to be attained in the solution’s smooth regions and maintaining the essential nonoscillation in the solution’s discontinuities. We discretize the convection term using the HWENO method and the diffusion term using the Hermite central interpolation schemes. However, it is difficult to deal with mixed derivative terms when solving two-dimensional problems using the HWENO method mentioned. To address this problem, we also employ the Hermite interpolation approach, which can keep the compactness. Lastly, we apply this method to two-dimensional Navier-Stokes problems that are incompressible. The efficiency and stability of the presented method are illustrated through numerous numerical experiments.

In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of 12 orders of magnitude and no obvious ambipolar effect can be obtained. High κ material stack gate dielectric is induced to improve the off-state leakage, interface characteristics and the reliability of DF-TFET. Moreover, by using the dopingless channel and fin structure, the difficulties of doping process and asymmetric gate overlap formation can be resolved. As a result, the structure of DF-TFET can possess good manufacture applicability and remarkably reduce footprint. The physical mechanism of device and the effect of parameters on performance are studied in this work. Finally, on-state current (ION) of 58.8 μA/μm, minimum subthreshold swing of 2.8 mV/dec (SSmin), average subthreshold swing (SSavg) of 18.2 mV/dec can be obtained. With improved capacitance characteristics, cutoff frequency of 5.04 GHz and gain bandwidth product of 1.29 GHz can be obtained. With improved performance and robustness, DF-TFET can be a very attractive candidate for ultra-low-power applications.