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Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor
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Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor
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Journal Article
Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor
2021
Overview
In this paper, a dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) based on biosensor is proposed for the detection of biomolecules. DM-DSTGTFET adopts double source and trench gate to enhance the on-state current and to generate bidirectional current. In the proposed structure, two cavities are etched over 1 nm gate oxide for biomolecules filling. A 2D simulation in the Technology Computer-Aided Design (TCAD) is adopted for the analysis of sensitivity study. The results show that under low supply voltage, the current sensitivity of the DM-DSTGTFET is as high as 1.38 × 105, and the threshold voltage sensitivity can reach 1.2 V. Therefore, the DM-DSTGTFET biosensor has good application prospects due to its low power consumption and high sensitivity.
Publisher
Springer Nature B.V
